Daily pre-work safety training for workers is essential due to their exposure to various hazardous factors. However, existing training methods often fail to effectively deliver information in a way that supports workers’ learning and comprehension, resulting in poor job performance and a lack of adherence to safety protocols. This study explores a novel approach to structuring safety training by examining the cognitive characteristics of workers in relation to the placement order and composition of training materi…

The effect of temperature on gate degradation behavior was analyzed in Schottky-type p-GaN gate HEMTs under a positive gate voltage. TDDB measurements were conducted at various temperatures, revealing an accelerated gate failure rate at lower temperatures. A Weibull distribution analysis was employed to predict the 10-year rated gate voltage, showing that the rated voltage at −10 °C is significantly lower than at 60 °C. Furthermore, the derived activation energy of −0.22 eV indicates that gate degradation intensif…

This study reports the fabrication and characterization of a p-GaN/AlGaN/GaN heterostructure field-effect transistor (HFET) incorporating a boron nitride (BN) film. The BN film was deposited at room temperature via RF sputtering (RT-RF sputtering) onto a SiOx passivation layer. A dual-layer passivation scheme—comprising the SiOx layer and the room-temperature-deposited BN film—was proposed to enhance interface quality and improve the on-resistance characteristics. The RT-RF sputtering BN film was fou…

ABSTRACT In this study, we propose a p‐GaN/AlGaN/GaN high‐electron mobility transistor (HEMT) featuring an extended metal‐oxide‐semiconductor (MOS) gate structure to enhance device performance. The extended MOS gate, located over the p‐GaN region and extending toward the drain side, increases current density while maintaining high breakdown voltage. By applying a positive bias to the extended MOS gate, the two‐dimensional electron gas density beneath the gate is enhanced, resulting in a higher drain current and lo…

In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage instability, suggesting that threshold voltage instability significant differences at elevated temperatures and is primarily attributed to the trapping/detrapping of charged carriers. Notably, the positive shift in threshold voltage diminished and eventually reversed …