I. Gamov
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View article: A carbon-doping related luminescence band in GaN revealed by below bandgap excitation
A carbon-doping related luminescence band in GaN revealed by below bandgap excitation Open
Carbon doped GaN grown by hydride vapor phase epitaxy was investigated by photoluminescence and photoluminescence excitation spectroscopy covering a broad range of carbon concentrations. Above bandgap excitation reveals typical transitions…
View article: Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)
Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN) Open
In this work, we study the absorption properties of AlN in the range of 1.5–5.5 eV, as well as the metastable change in absorption induced by ultraviolet (UV) irradiation (photochromism). We also study the restoration of the initial state …
View article: Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects
Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects Open
Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds 5 × 1017 cm−3, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the i…
View article: Electromechanical losses in carbon- and oxygen-containing bulk AlN single crystals
Electromechanical losses in carbon- and oxygen-containing bulk AlN single crystals Open
Bulk single-crystalline aluminum nitride (AlN) is potentially a key component for low-loss high-temperature piezoelectric devices. However, the incorporation of electrically active impurities and defects during growth of AlN may adversely …
View article: Growth and Properties of Intentionally Carbon‐Doped GaN Layers
Growth and Properties of Intentionally Carbon‐Doped GaN Layers Open
Carbon‐doping of GaN layers with thickness in the mm‐range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi‐insulating behavior with a maximum of specific resistivity of 2 × …