Igor Fontan
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View article: Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing Open
We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( V Si − ) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm − 2 energy density range. The la…