Igor Khanonkin
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View article: On the relationship between noise squeezing and Rabi oscillations in active quantum dot ensembles
On the relationship between noise squeezing and Rabi oscillations in active quantum dot ensembles Open
Squeezed light is usually generated using passive nonlinear materials. Semiconductor lasers and optical amplifiers (SOAs) also offer nonlinearities but they differ in that they add amplified spontaneous emission (ASE). Squeezing to below t…
View article: Cavity-Driven Attractive Interactions in Quantum Materials
Cavity-Driven Attractive Interactions in Quantum Materials Open
Many-body phenomena in quantum materials emerge from the interplay among a broad continuum of electronic states, and controlling these interactions is critical for engineering novel phases. One promising approach exploits fluctuations of t…
View article: Strategies for the alignment of electronic states in quantum-dot tunnel-injection lasers and their influence on the emission dynamics
Strategies for the alignment of electronic states in quantum-dot tunnel-injection lasers and their influence on the emission dynamics Open
In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic…
View article: On the relation between electrical and electro-optical properties of tunnelling injection quantum dot lasers
On the relation between electrical and electro-optical properties of tunnelling injection quantum dot lasers Open
We present a comprehensive study of the temperature dependent electronic and optoelectronic properties of a tunnelling injection quantum dot laser. The optical power-voltage ( P opt – V ) characteristics are shown to be correlated with the…
View article: Carrier dynamics in quantum-dot tunnel-injection structures: Microscopic theory and experiment
Carrier dynamics in quantum-dot tunnel-injection structures: Microscopic theory and experiment Open
Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneli…
View article: Steering coherence in quantum dots by carriers injection via tunneling
Steering coherence in quantum dots by carriers injection via tunneling Open
Coherent control is a key experimental technique for quantum optics and quantum information processing. We demonstrate a new degree of freedom in coherent control of semiconductor quantum dot (QD) ensembles operating at room temperature us…
View article: High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths
High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths Open
We describe the fabrication process and properties of an InP based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate. Several layers of QD-based dislocation filters embedded in GaAs and InP were used to minimize the …
View article: On the carrier transport and radiative recombination mechanisms in tunneling injection quantum dot lasers
On the carrier transport and radiative recombination mechanisms in tunneling injection quantum dot lasers Open
We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompan…
View article: Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier
Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier Open
The process of tunneling injection is known to improve the dynamical\ncharacteristics of quantum well and quantum dot lasers; in the latter, it also\nimproves the temperature performance. The advantage of the tunneling injection\nprocess s…
View article: Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier
Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier Open
The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical application…
View article: Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots Open
The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response o…