Explanipedia

Semiconductor Nanomaterials for Optoelectronic Applications Open

Ikai Lo · 2024

Nanotechnology has been comprehensively investigated for more than 30 years [...]

Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs Open

Yu-Chung Lin, Ikai Lo, Cheng-Da Tsai, Ying‐Chieh Wang, Hui‐Chun Huang , et al. · 2023

Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick mod…

Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy Open

Ying‐Chieh Wang, Ikai Lo, Yu-Chung Lin, Cheng-Da Tsai, Ting‐Chang Chang · 2023

Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate by employing a shutter-controlled process. The transition from n-type to p-type conductivity of Mg-doped GaN in relation to the N…

Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy Open

Huei-Jyun Shih, Ikai Lo, Ying‐Chieh Wang, Cheng-Da Tsai, Yu-Chung Lin , et al. · 2022

The nearly lattice-matched InxGa1−xN/InyAl1−yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique. The band-gap energy of InxGa1−xN QW in photoluminescence measurement was es…

Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy Open

Hongyi Yang, Ikai Lo, Cheng-Da Tsai, Ying‐Chieh Wang, Huei-Jyun Shih , et al. · 2020

Lattice relaxation on wurtzite GaN microdisks grown by plasma-assisted molecular beam epitaxy was systematically studied. The lattice constants of GaN microdisks were evaluated from high-resolution transmission electron microscopy, and the…

Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy Open

Cheng-Da Tsai, Ikai Lo, Ying‐Chieh Wang, Chen-Chi Yang, Hongyi Yang , et al. · 2019

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In +…

Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate Open

Cheng-Da Tsai, Ikai Lo, Ying‐Chieh Wang, Chen-Chi Yang, Shuo-Ting You , et al. · 2018

We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved. Th…

Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy Open

Shuo-Ting You, Ikai Lo, Huei-Jyun Shih, Hui-Chun Hang, Mitch M. C. Chou · 2018

We have grown a high-quality single-phase M-plane GaN on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy. The Hooke’s law for M-plane GaN was derived by a stress tenor transformation. From the analysis of M-plane GaN microstructur…

GaN and InN Hexagonal Microdisks Open

Chen-Chi Yang, Ikai Lo, Yu-Chi Hsu, Hongyi Yang · 2018

The high-quality GaN microdisks with InGaN/GaN quantum wells (QWs) and InN microdisks were grown on γ-LiAlO2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The samples were analysed using scanning electron microscopy, X-ray…

Advances in GaN Crystals and Their Applications Open

Ikai Lo · 2018

This special issue looks at the potential applications of GaN-based crystals in both fields of nano-electronics and optoelectronics. The contents will focus on the fabrication and characterization of GaN-based thin films and nanostructures…

Growth and Characteristics of High-quality InN by Plasma- Assisted Molecular Beam Epitaxy Open

Chen-Chi Yang, Ikai Lo, Cheng-Hung Shih, Chia-Hsuan Hu, Ying‐Chieh Wang , et al. · 2017

The high-quality InN epifilms and InN microdisks have been grown with InGaN buffer layers at low temperatures by plasma-assisted molecular beam epitaxy. The samples were analyzed using X-ray diffraction, scanning electron microscopy, high-…

Refractive Index Measurement Using the Laser Profiler Open

Vladislav A. Kolchinskiy, Cheng-Hung Shih, Ikai Lo, Roman V. Romashko · 2017

The paper proposes a method for measuring the refractive index of the plane-parallel samples of the material using laser profiler. The method is based on measurement of the displacement due to refraction of the laser beam passing through a…

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates Open

Yu-Chiao Lin, Ikai Lo, Hui-Chun Shih, Mitch M. C. Chou, D. M. Schaadt · 2017

-plane GaN thin films were grown on LiAlO 2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of -plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio dec…

Growth of InN hexagonal microdisks Open

Chen-Chi Yang, Ikai Lo, Chia-Hsuan Hu, Hui‐Chun Huang, Mitch M. C. Chou · 2016

InN hexagonal thin wurtzite disks were grown on γ-LiAlO2 by plasma-assisted molecular-beam epitaxy at low temperature (470oC). The (0001¯) InN thin disk was established with the capture of N atoms by the β¯-dangling bonds of most-outside I…

Epitaxial growth of GaN on ZnO micro-rod by Plasma-Assisted Molecular Beam Epitaxy Open

Shou-Ting You, Ikai Lo, Jenn-Kai Tsai, Cheng-Hug Shih · 2016

Epitaxial growth of M -plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy Open

Shuo-Ting You, Ikai Lo, Jenn-Kai Tsai, Cheng-Hung Shih · 2015

We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface (101̄0) by scanning transmission electron microscope, we found that th…

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