Irina Chircă
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View article: Se Nanowire Crystal Formation via Oxidation of 2D HfSe<sub>2</sub>: A Solid-State, In Situ Reaction Coupling for Heterogeneous Integration Technologies
Se Nanowire Crystal Formation via Oxidation of 2D HfSe<sub>2</sub>: A Solid-State, In Situ Reaction Coupling for Heterogeneous Integration Technologies Open
Effective heterogeneous integration of low-dimensional nanomaterials in applications ranging from quantum electronics to biomedical devices requires a detailed understanding of different formation and interfacing reactions and the ability …
View article: Forming and compliance-free operation of low-energy, fast-switching HfO<sub><i>x</i></sub>S<sub><i>y</i></sub>/HfS<sub>2</sub> memristors
Forming and compliance-free operation of low-energy, fast-switching HfO<sub><i>x</i></sub>S<sub><i>y</i></sub>/HfS<sub>2</sub> memristors Open
Memristors based on partially oxidised layered semiconductors show sub-nJ resistance switching between several states with no need for electroforming or compliance, making them promising candidates for future neuromorphic computing hardwar…
View article: Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications
Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications Open
Oxidation of 2D layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low‐power electronic devices. Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monoch…
View article: Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors
Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors Open
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide heterostr…
View article: Versatile fitting approach for operando spectroscopic imaging ellipsometry of HfS<sub>2</sub> oxidation
Versatile fitting approach for operando spectroscopic imaging ellipsometry of HfS<sub>2</sub> oxidation Open
Facile mapping of 2D heterostructures and resolving anisotropic formation kinetics down to the monolayer level are critical to developing scalable interfacing solutions and unlocking their application potential in emerging nano-optoelectro…
View article: Controlled Fabrication of Native Ultra-Thin Amorphous Gallium Oxide from 2D Gallium Sulfide for Emerging Electronic Applications
Controlled Fabrication of Native Ultra-Thin Amorphous Gallium Oxide from 2D Gallium Sulfide for Emerging Electronic Applications Open
Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($β$-GaS), a hexagonal ph…
View article: Buried graphene heterostructures for electrostatic doping of low-dimensional materials
Buried graphene heterostructures for electrostatic doping of low-dimensional materials Open
The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the channel. In…
View article: Building Confidence in Simulation: Applications of EasyVVUQ
Building Confidence in Simulation: Applications of EasyVVUQ Open
Validation, verification, and uncertainty quantification (VVUQ) of simulation workflows are essential for building trust in simulation results, and their increased use in decision‐making processes. The EasyVVUQ Python library is designed t…