Isaac Bryan
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View article: Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys Open
In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surf…
View article: Second-Harmonic Generation of Blue Light in GaN Waveguides
Second-Harmonic Generation of Blue Light in GaN Waveguides Open
Second-harmonic generation was studied in III-metal-polar GaN films grown on sapphire substrates by metalorganic chemical vapor deposition and formed into ridge waveguides. Broadband near-IR femtosecond pulses of an optical parametric ampl…
View article: On compensation in Si-doped AlN
On compensation in Si-doped AlN Open
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in…
View article: Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy
Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy Open
A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporat…
View article: Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Open
A theoretical framework for a general approach to reduce point defect density in materials via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved via excess minority carrier generation. General guideli…
View article: UV second harmonic generation in AlN waveguides with modal phase matching
UV second harmonic generation in AlN waveguides with modal phase matching Open
AlN waveguides on sapphire substrates were fabricated from AlN films grown by metalorganic chemical vapor deposition. By tuning the wavelength of the pump light we demonstrated a second harmonic generation in the UV at 306, 331, and 356 nm…
View article: Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties
Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties Open
AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are t…
View article: Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN Open
In this work, the Fermi level and band alignment at c-plane surfaces and interfaces of AlGaN thin films grown on sapphire and native single crystalline AlN substrates were analyzed via x-ray photoelectron spectroscopy. The dependence of ch…
View article: A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN
A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN Open
Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is develope…
View article: Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Open
Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGa…
View article: Electronic Biosensors Based on III-Nitride Semiconductors
Electronic Biosensors Based on III-Nitride Semiconductors Open
We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stab…