Isaac Stricklin
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View article: Multipurpose active scanning probe cantilevers for near-field spectroscopy, scanning tunnel imaging, and atomic-resolution lithography
Multipurpose active scanning probe cantilevers for near-field spectroscopy, scanning tunnel imaging, and atomic-resolution lithography Open
In this work, we report progress on developing a multipurpose scanning probe cantilever applying gallium nitride nanowires as the probe tip. Gallium nitride nanowires possess high potential as probes due to their straight profile, tunable …
View article: Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution Open
A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ScxAl1−xN a promising material in numerous MEMS and optoelectronics applications. One of the subst…
View article: High-Quality Dry Etching of LiNbO3 Assisted by Proton Substitution through H2-Plasma Surface Treatment
High-Quality Dry Etching of LiNbO3 Assisted by Proton Substitution through H2-Plasma Surface Treatment Open
The exceptional material properties of Lithium Niobate (LiNbO3) make it an excellent material platform for a wide range of RF, MEMS, phononic and photonic applications; however, nano-micro scale device concepts require high fidelity proces…
View article: High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control
High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control Open
This project studied and implemented methods to form GaN p-n diodes using selective area regrowth to achieve selective area doping. Successful selective area doping of GaN p-n diodes is an enabling factor to realize more advanced devices s…
View article: Nanocomposite-seeded single-domain growth of single- domain LiNbO3 thin films for RF/Photonic applications.
Nanocomposite-seeded single-domain growth of single- domain LiNbO3 thin films for RF/Photonic applications. Open
A comprehensive microstructure characterization is performed and optical properties are measured. A piezoelectric acoustic resonator device is developed to demonstrate the future potential of the nanocomposite-seeded approach for high-qual…
View article: Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar <i>m‐</i>Plane GaN Vertical <i>p–n</i> Diodes
Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar <i>m‐</i>Plane GaN Vertical <i>p–n</i> Diodes Open
Impacts of silicon, carbon, and oxygen interfacial impurities on the performance of high‐voltage vertical GaN‐based p–n diodes are investigated. The results indicate that moderate levels (≈5 × 10 17 cm −3 ) of all interfacial impurities le…
View article: High-Voltage Regrown Nonpolar <inline-formula> <tex-math notation="LaTeX">${m}$ </tex-math> </inline-formula>-Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches
High-Voltage Regrown Nonpolar -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches Open
Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×1017 cm…
View article: Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices
Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices Open
GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form factor. One challenge for realizing comp…
View article: Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes
Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes Open
In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, …