J. Ajayan
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View article: Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer Open
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al0.7In0.15Ga0.15N back-barrier la…
View article: Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems
Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems Open
An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. The impact of high-K dielectric materials (HfO2: K = 25, ZrO2: K = 30 and TiO2: K = …
View article: A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications
A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications Open
In this paper, various D flip‐flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Ba…
View article: Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review
Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review Open
Industries including energy production, automotive and aerospace has seen a tremendous increase in interest in high temperature electronics. There has been a lot of investigations done on wide bandgap materials because of the difficulties …
View article: Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review
Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review Open
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ea…
View article: LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications Open
High-performance LG = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer s…
View article: Design and Analysis of Dual-k Spacer CombFET for Digital and Synaptic Applications
Design and Analysis of Dual-k Spacer CombFET for Digital and Synaptic Applications Open
This paper delves into the burgeoning realm of CombFETs, offering a comprehensive analysis of their structural design, simulation methodologies, and performance characteristics. With a focus on addressing the evolving demands of semiconduc…
View article: High-k Material in InGaN/GaN LED for Solid State Lightening Applications
High-k Material in InGaN/GaN LED for Solid State Lightening Applications Open
The p-GaN layer adjacent to the quantum well is proposed for InGaN/GaN Light Emitting Diode (LED), it enhances the output optical power and internal quantum efficiency. The physical simulator Technology Computer-Aided Design (TCAD) is used…
View article: Finite impulse response design based on two‐level transpose Vedic multiplier for medical image noise reduction
Finite impulse response design based on two‐level transpose Vedic multiplier for medical image noise reduction Open
Medical signal processing requires noise and interference‐free inputs for precise segregation and classification operations. However, sensing and transmitting wireless media/devices generate noise that results in signal tampering in featur…
View article: Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective
Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective Open
In this article, the comparison of nanosheet (NS) FET, CombFET, and TreeFETs at advanced technology nodes is performed. Initially, the DC metrics like , and are dominated by TreeFET compared to Comb and NSFET. The TreeFET exhibits higher…
View article: A Novel L<sub>G</sub> = 40 nm AlN-GDC-HEMT on SiC Wafer With f<sub>T</sub>/I<sub>DS,peak</sub> of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers
A Novel L<sub>G</sub> = 40 nm AlN-GDC-HEMT on SiC Wafer With f<sub>T</sub>/I<sub>DS,peak</sub> of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers Open
In this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-c…
View article: Performance Evaluation of Nanoscale Gate Engineered AlN/GaN Recessed T-gated HEMT with Fe-doped Buffer for Future Power Electronic Applications
Performance Evaluation of Nanoscale Gate Engineered AlN/GaN Recessed T-gated HEMT with Fe-doped Buffer for Future Power Electronic Applications Open
GaN-HEMT (high-electron-mobility-transistor) power electronic applications require threshold voltage (V th ) controlling for safe operation.Electrical aspects including OFF-state leakage current, V th , and forward operating current, all r…
View article: Driving Capability Analysis and Power Supply Scaling Effects of Deep Nanoscale 1-bit Full Adder at Wide Operating Temperatures
Driving Capability Analysis and Power Supply Scaling Effects of Deep Nanoscale 1-bit Full Adder at Wide Operating Temperatures Open
1-Bit Full Adders (1-BFA) are the basic building blocks of advanced VLSI systems such as, micro and digital and signal processors.Therefore, here we report the driving capability and thermal reliability of 1-BFA designed using 16 nm CMOS p…
View article: Reliability Study of Highly Sensitive Nanoscale Dynamic Comparators Over a Wide Range of VDDs/Temperatures for Future Flash/SAR ADCs
Reliability Study of Highly Sensitive Nanoscale Dynamic Comparators Over a Wide Range of VDDs/Temperatures for Future Flash/SAR ADCs Open
SAR (Successive approximation register)/Flash ADCs (Analog to digital converters) are the most important circuits used in a wide range of applications such as image sensing, data storage, ultrasound image, neural recording, wireless commun…
View article: Impact of Gate Structure and Fe-doped AlGaN Buffer on RF/DC Characteristics of Nanoscale AlN/GaN/SiC HEMT for Microwave Applications
Impact of Gate Structure and Fe-doped AlGaN Buffer on RF/DC Characteristics of Nanoscale AlN/GaN/SiC HEMT for Microwave Applications Open
The influence of gate structure on AlN/GaN/SiC HEMT (High electron mobility transistor) is analyzed in this paper.The design and comparison of a T-gate HEMT with a gate footprint of 100 nm and a rectangular gate HEMT with a gate length (L …
View article: Speed and Thermal Reliability Study of Aggressively Scaled Low Power Nanoscale RTFF/REFF/SSPL D-flip Flops
Speed and Thermal Reliability Study of Aggressively Scaled Low Power Nanoscale RTFF/REFF/SSPL D-flip Flops Open
In this SPICE simulation study, we systematically analyzed the speed and reliability performance of RTFF (Input-aware pre-charge retentive true single phase clocked flip-flop), REFF (Redundancy eliminated flip-flop) and SSPL (Self-shut off…
View article: A Comprehensive Study on Scalability and Thermal Reliability of Positive/Negative Edge Triggered TSPC-D Flip Flops
A Comprehensive Study on Scalability and Thermal Reliability of Positive/Negative Edge Triggered TSPC-D Flip Flops Open
This paper studies the scalability and thermal reliability of Positive/Negative Edge Triggered type True Single Phase Clock-D Flip Flops (PET/NET-TSPC-DFFs) implemented using 16 nm, 22 nm, 32 nm and 45 nm CMOS processes with a V DD (supply…
View article: Introduction to Conventional MOSFET and Advanced Transistor TFET
Introduction to Conventional MOSFET and Advanced Transistor TFET Open
Integrated circuits have undergone significant development over the past several decades. Because of the increased density of transistors in CMOS devices, faster, more efficient, and more complex electronics are all feasible. Since more pe…
View article: Impact of boron in ultraviolet quantum well-based light emitting diodes
Impact of boron in ultraviolet quantum well-based light emitting diodes Open
The B y Al x Ga 1-x–y N system validates promise as a suitable option for fabricating opto-electronic devices like Light-Emitting-Diodes (LEDs) & laser diodes. This study conducts a comparative analysis between two types of LEDs: one with …
View article: Segmentation of Brain MRI Images using Multi-Kernel FCM EHO Method
Segmentation of Brain MRI Images using Multi-Kernel FCM EHO Method Open
Background: In image processing, image segmentation is a more challenging task due to different shapes, locations, image intensities, etc. Brain tumors are one of the most common diseases in the world. So, the detection and segmentation of…
View article: Semi-classical physics based model in AlGaN/BGaN based Ultraviolet LED with p-AlGaN layer sandwiched around electron-blocking layer for droop-free efficiency
Semi-classical physics based model in AlGaN/BGaN based Ultraviolet LED with p-AlGaN layer sandwiched around electron-blocking layer for droop-free efficiency Open
This work reports the droop-free efficiency of an Ultraviolet Light Emitting Diode (UV LED) of Multiple Quantum Well (MQW) with an Electron Blocking Layer (EBL) sandwiched with a p-AlGaN layer. In the proposed device structure, the BGaN Qu…
View article: <scp>AlexNet‐NDTL</scp>: Classification of <scp>MRI</scp> brain tumor images using modified <scp>AlexNet</scp> with deep transfer learning and Lipschitz‐based data augmentation
<span>AlexNet‐NDTL</span>: Classification of <span>MRI</span> brain tumor images using modified <span>AlexNet</span> with deep transfer learning and Lipschitz‐based data augmentation Open
Deep learning is frequently used to classify medical images. Surgeons may know the type of tumor before doing surgery on a patient. Transfer learning was used to alleviate the overfitting issue of deep networks in classification since the …
View article: Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems
Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems Open
In this research work, design of the Extended Field Plate Length (E-FPL) T-gate with Fe doped AlGaN buffer structure on the graded Aluminum Gallium nitride (AlGaN)/ Gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed…
View article: 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites
60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites Open
The influence of double deck T-gate on L G =0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges an…