J. Bleuse
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View article: Low-loss 200-mm diameter SiN platform including WI-SNSPD for quantum photonics applications from 900 to 940 nm
Low-loss 200-mm diameter SiN platform including WI-SNSPD for quantum photonics applications from 900 to 940 nm Open
International audience
View article: Generation of ultrashort (~10ps) spontaneous emission pulses by quantum dots in a switched optical microcavity
Generation of ultrashort (~10ps) spontaneous emission pulses by quantum dots in a switched optical microcavity Open
We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental …
View article: NbN waveguide-integrated superconducting nanowire single-photon detectors on 200 mm SOI wafers
NbN waveguide-integrated superconducting nanowire single-photon detectors on 200 mm SOI wafers Open
International audience
View article: On-Chip Electrostatic Actuation of a Photonic Wire Antenna Embedding Quantum Dots
On-Chip Electrostatic Actuation of a Photonic Wire Antenna Embedding Quantum Dots Open
A photonic wire antenna embedding individual quantum dots (QDs) constitutes a promising platform for both quantum photonics and hybrid nanomechanics. We demonstrate here an integrated device in which on-chip electrodes can apply a static o…
View article: The role of surface states and point defects on optical properties of InGaN/GaN multi-quantum wells in nanowires grown by molecular beam epitaxy
The role of surface states and point defects on optical properties of InGaN/GaN multi-quantum wells in nanowires grown by molecular beam epitaxy Open
The optical properties of nanowire-based InGaN/GaN multiple quantum wells (MQWs) heterostructures grown by plasma-assisted molecular beam epitaxy are investigated. The beneficial effect of an InGaN underlayer grown below the active region …
View article: A nanowire optical nanocavity for broadband enhancement of spontaneous emission
A nanowire optical nanocavity for broadband enhancement of spontaneous emission Open
To deliver an optimal performance for photonic quantum technologies, semiconductor quantum dots should be integrated in a carefully designed photonic structure. Here, we introduce a nanowire optical nanocavity designed for free-space emiss…
View article: Probing microcavity switching events on the picosecond time scale using quantum dots as a broadband internal fluorescent source
Probing microcavity switching events on the picosecond time scale using quantum dots as a broadband internal fluorescent source Open
We report on ultrafast all-optical switching experiments performed on pillar microcavities containing a collection of quantum dots (QDs). Using QDs as a broadband internal light source and a detection setup based on a streak camera, we tra…
View article: Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on <i>m</i>-plane GaN Wire Sidewalls
Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on <i>m</i>-plane GaN Wire Sidewalls Open
Different types of buffer layers such as InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of c-plane InGaN/GaN-based light-emitting diodes (LEDs). The present work investigates th…
View article: Generation of ultrashort (~10ps) spontaneous emission pulses by quantum dots in a switched optical microcavity
Generation of ultrashort (~10ps) spontaneous emission pulses by quantum dots in a switched optical microcavity Open
We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental …
View article: II-VI semiconductors and derivated kesterites structures for photovoltaic conversion
II-VI semiconductors and derivated kesterites structures for photovoltaic conversion Open
International audience
View article: Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures Open
In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μ…
View article: Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures Open
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the …
View article: Determination of radial quantum dot position in trumpet nanowires from far field measurements
Determination of radial quantum dot position in trumpet nanowires from far field measurements Open
A quantum dot embedded in a trumpet nanowire has been shown to be a good candidate for realising an efficient on-demand single-photon source [1, 2]. At the lateral quantum dot position the diameter of the nanowire only supports two guided …
View article: Self-Catalyzed Growth of Highly Vertical GaAs Core-Shell Nanowires on Chemically-Treated Si(111) Surfaces
Self-Catalyzed Growth of Highly Vertical GaAs Core-Shell Nanowires on Chemically-Treated Si(111) Surfaces Open
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View article: Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core–Shell Nanowires on Silicon
Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core–Shell Nanowires on Silicon Open
We present a set of experimental results showing a combination of various effects, that is, surface recombination velocity, surface charge traps, strain, and structural defects, that govern the carrier dynamics of self-catalyzed GaAs/AlGaA…
View article: Large and Uniform Optical Emission Shifts in Quantum Dots Strained along Their Growth Axis
Large and Uniform Optical Emission Shifts in Quantum Dots Strained along Their Growth Axis Open
We introduce a calibration method to quantify the impact of external mechanical stress on the emission wavelength of distinct quantum dots (QDs). Specifically, these emitters are integrated in a cross-section of a semiconductor core wire a…
View article: Long-lived excitons in GaN/AlN nanowire heterostructures
Long-lived excitons in GaN/AlN nanowire heterostructures Open
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay\ntimes on the order of microseconds that persist up to room temperature. Doping\nthe GaN nanodisk insertions with Ge can reduce these PL decay times by two\norders …
View article: Quantum dot spontaneous emission control in a ridge waveguide
Quantum dot spontaneous emission control in a ridge waveguide Open
We investigate the spontaneous emission (SE) of self-assembled InAs quantum dots (QDs) embedded in GaAs ridge waveguides that lay on a low index substrate. In thin enough waveguides, the coupling to the fundamental guided mode is vanishing…