J. Bourgard
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View article: Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure
Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure Open
The electronic structure of highly Si-doped GaAs NWs is ruled by fluctuating potentials: luminescence intensity increase and polytypism influence reduction.