Joff Derluyn
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View article: A micro-electro-mechanical accelerometer based on gallium nitride on silicon
A micro-electro-mechanical accelerometer based on gallium nitride on silicon Open
We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a micro-electro-mechanical-system technology starting from an AlGaN/GaN heterostructure…
View article: Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field
Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field Open
International audience
View article: Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors Open
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below…
View article: AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts Open
High power electronics using wide bandgap materials are maturing rapidly, and significant market growth is expected in a near future. Ultra wide bandgap materials, which have an even larger bandgap than GaN (3.4 eV), represent an attractiv…
View article: High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications Open
The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) b…
View article: Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure
Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure Open
S.310-312
View article: Optimising GaN heterostructures for 5G
Optimising GaN heterostructures for 5G Open
THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole Développement. The move fr…
View article: Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment Open
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specificall…
View article: Vertical breakdown of GaN on Si due to V-pits
Vertical breakdown of GaN on Si due to V-pits Open
Gallium nitride on silicon (GaN/Si) is an important technological approach for power electronic devices exhibiting superior performance compared to devices based on a pure silicon technology. However, the material defect density in GaN/Si …
View article: Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures Open
Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing …
View article: Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment Open
International audience
View article: High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation Open
In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density I D of 1.5 A/mm associated to …
View article: Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V Open
International audience
View article: GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current Open
In this work an extensive analysis on the leakage current of three samples obtained by stopping the epitaxial growth of a GaN-on-Silicon stack is presented. We studied the current leakage behavior and the breakdown voltage as a function of…
View article: Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications Open
International audience
View article: Pushing the limits of GaN-based power devices and power electronics
Pushing the limits of GaN-based power devices and power electronics Open
Article in Bodo´s Power Systems magazine
View article: Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs
Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs Open
Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were comb…