J. Knabe
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View article: Oxygen Vacancy Dynamics in Different Switching Modes of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2−δ</sub>
Oxygen Vacancy Dynamics in Different Switching Modes of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2−δ</sub> Open
HfO2, one of the most common materials in resistive switching devices, can stabilize in a ferroelectric orthorhombic phase, enabling two nonvolatile polarization states via oxygen displacement in the unit cell. Under certain conditions, fe…
View article: Dual‐Mode Operation of Epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>: Ferroelectric and Filamentary‐Type Resistive Switching
Dual‐Mode Operation of Epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>: Ferroelectric and Filamentary‐Type Resistive Switching Open
Since the discovery of its ferroelectricity, hafnium oxide is widely used for applications in ferroelectric field‐effect transistors and ferroelectric tunnel junctions. is especially favored for its robust ferroelectricity and high remanen…