J. Schwandt
YOU?
Author Swipe
View article: The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam
The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam Open
The Fast Beam Condition Monitor (FBCM) is a standalone luminometer for the High Luminosity LHC (HL-LHC) program of the CMS Experiment at CERN. The detector is under development and features a new, radiation-hard, front-end application-spec…
View article: On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission
On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission Open
The elusive X-Defect, a defect found in low-resistivity $p$-type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i}$ defect (Boron-interstitial-Oxygen-interstitial complex) …
View article: Extending SiPM dynamic range with non-linear response correction: the single-step method
Extending SiPM dynamic range with non-linear response correction: the single-step method Open
Silicon Photomultipliers (SiPMs) exhibit a non-linear response when exposed to high light levels due both to the finite number of available pixels (cells) and to their operation in Geiger mode, which together limit their effective dynamic …
View article: The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam
The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam Open
The Fast Beam Condition Monitor (FBCM) is a standalone luminometer for the High Luminosity LHC (HL-LHC) program of the CMS Experiment at CERN. The detector is under development and features a new, radiation-hard, front-end application-spec…
View article: Defects and acceptor removal in 60Co γ-irradiated p-type silicon
Defects and acceptor removal in 60Co γ-irradiated p-type silicon Open
Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called Acc…
View article: Electronics design and testing of the CMS Fast Beam Condition Monitor for HL-LHC
Electronics design and testing of the CMS Fast Beam Condition Monitor for HL-LHC Open
The high-luminosity upgrade of the LHC (HL-LHC) brings unprecedented requirements forprecision bunch-by-bunch luminosity measurement and beam-induced background monitoring inreal time. A key component of the CMS Beam Radiation Instrumentat…
View article: Electronics design and testing of the CMS Fast Beam Condition Monitor for HL-LHC
Electronics design and testing of the CMS Fast Beam Condition Monitor for HL-LHC Open
The high-luminosity upgrade of the LHC (HL-LHC) brings unprecedented requirements for precision bunch-by-bunch luminosity measurement and beam-induced background monitoring in real time. A key component of the CMS Beam Radiation Instrument…
View article: Precision determination of the track-position resolution of beam telescopes
Precision determination of the track-position resolution of beam telescopes Open
Beam tests using tracking telescopes are a standard method for determining the spatial resolution of detectors. This requires the precise knowledge of the position resolution of beam tracks reconstructed at the Device Under Test (DUT). A m…
View article: Determination of Self-Heating in Silicon Photomultipliers
Determination of Self-Heating in Silicon Photomultipliers Open
The main consequence of radiation damage on a silicon photomultiplier (SiPM) is a significant increase in the dark current. If the SiPM is not adequately cooled, the power dissipation causes it to heat up, which alters its performance para…
View article: Investigations of self-heating effects in Silicon-Photomultipliers
Investigations of self-heating effects in Silicon-Photomultipliers Open
The main consequence of radiation damage on a Silicon-Photomultiplier (SiPM) is a significant increase in the dark current. If the SiPM is not adequately cooled, the power dissipation causes it to heat up, which in turn affects its perform…
View article: SiPM understanding using simple Geiger-breakdown simulations
SiPM understanding using simple Geiger-breakdown simulations Open
The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1μm based on the method proposed in Ref. Windischhofer and Riegler (2023), are presented. The aim of the study is …
View article: Correcting the Non-Linear Response of Silicon Photomultipliers
Correcting the Non-Linear Response of Silicon Photomultipliers Open
The finite number of pixels in a silicon photomultiplier (SiPM) limits its dynamic range to light pulses up to typically 80% of the total number of pixels in a device. Correcting the non-linear response is essential to extend the SiPM’s dy…
View article: The CMS Fast Beam Condition Monitor for HL-LHC
The CMS Fast Beam Condition Monitor for HL-LHC Open
The high-luminosity upgrade of the LHC brings unprecedented requirements for real-time and precision bunch-by-bunch online luminosity measurement and beam-induced background monitoring. A key component of the CMS Beam Radiation, Instrument…
View article: The CMS Fast Beam Condition Monitor for HL-LHC
The CMS Fast Beam Condition Monitor for HL-LHC Open
The high-luminosity upgrade of the LHC brings unprecedented requirements for real-time and precision bunch-by-bunch online luminosity measurement and beam-induced background monitoring. A key component of the CMS Beam Radiation, Instrument…
View article: SiPM understanding using simple Geiger-breakdown simulations
SiPM understanding using simple Geiger-breakdown simulations Open
The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $μ$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper understan…
View article: Investigation of high resistivity <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si57.svg" display="inline" id="d1e1353"><mml:mi>p</mml:mi></mml:math>-type FZ silicon diodes after 60Co <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si439.svg" display="inline" id="d1e1361"><mml:mi>γ</mml:mi></mml:math>-irradiation
Investigation of high resistivity -type FZ silicon diodes after 60Co -irradiation Open
View article: Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon Open
View article: Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation Open
In this work, the effects of $^\text{60}$Co $γ$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$, $C$--$V$) …
View article: Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon Open
This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} elect…
View article: PeakOTron: A Python Module for Fitting Charge Spectra of Silicon Photomultipliers
PeakOTron: A Python Module for Fitting Charge Spectra of Silicon Photomultipliers Open
A Python program has been developed which fits a published detector-response model to SiPM charge spectra to characterise SiPMs. Spectra for SiPMs illuminated by low intensity pulsed light with Poisson-distributed number of photons and a t…
View article: Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors Open
High-energy physics detectors with internal charge multiplication, like Low Gain Avalanche Detectors (LGADs), that will be used for fast timing in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. In t…
View article: Study of the V$_2^0$ state in neutron-irradiated silicon using photon-absorption measurements
Study of the V$_2^0$ state in neutron-irradiated silicon using photon-absorption measurements Open
Pieces of $n$-type silicon with 3.5 k$Ω\cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have been det…
View article: Study of depth-dependent charge collection profiles in irradiated pad diodes
Study of depth-dependent charge collection profiles in irradiated pad diodes Open
In this work, charge collection profiles of non-irradiated and irradiated 150 $μ$m $p$-type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1 MeV…
View article: Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction
Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction Open
New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a h…
View article: Study of the band-gap energy of radiation-damaged silicon
Study of the band-gap energy of radiation-damaged silicon Open
The transmission of silicon crystals irradiated by 24 GeV/c protons and reactor neutrons has been measured for photon energies, E γ , between 0.95 and 1.3 eV. From the transmission data the absorption coefficient α is calculated, and from …
View article: Radiation damage uniformity in a SiPM
Radiation damage uniformity in a SiPM Open
View article: Self-heating effect in Silicon-Photomultipliers
Self-heating effect in Silicon-Photomultipliers Open
View article: Radiation hardness study using SiPMs with single-cell readout
Radiation hardness study using SiPMs with single-cell readout Open
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Φ = 5e13 cm−2. The cell has a pitch of 15μm. T…
View article: The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes Open
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV (\n $E_{\\text {kin}}$ \n) protons, inc…
View article: Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?
Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements? Open