J.R. East
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View article: Dual‐frequency‐selective surfaces for near‐infrared bandpass filters
Dual‐frequency‐selective surfaces for near‐infrared bandpass filters Open
A bandpass filter resonating at ∼1.4 μm and based on a dual‐frequency‐selective surface design is fabricated and characterized on a silicon substrate. The filter consists of square apertures arranged in a square lattice and separated by ma…
View article: Frequency‐selective surface based bandpass filters in the near‐infrared region
Frequency‐selective surface based bandpass filters in the near‐infrared region Open
A spatial bandpass filter resonant at 1.5 μm and based on a frequency‐selective surface (FSS) was analyzed and fabricated. It consists of circular apertures arranged in a hexagonal lattice and was modeled using a hybrid finite‐element/boun…
View article: Gradient optimization of RF amplifiers for digital communications
Gradient optimization of RF amplifiers for digital communications Open
A gradient optimization methodology for use with nonlinear envelope simulation is presented. Emphasis is placed on efficient evaluation of cost function gradients. To this end, an envelope sensitivity equation is derived and methods for it…
View article: Erratum: ‘‘Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors’’ [J. Appl. Phys. <b>75</b>, 7910 (1994)]
Erratum: ‘‘Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors’’ [J. Appl. Phys. <b>75</b>, 7910 (1994)] Open
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View article: MIMIC mixer/multiplier : quarterly report
MIMIC mixer/multiplier : quarterly report Open
http://deepblue.lib.umich.edu/bitstream/2027.42/5882/5/bac6472.0001.001.pdf
View article: Built-in biaxial strain dependence of Γ-<i>X</i> transport in GaAs/In<i>x</i>Al1−<i>x</i>As/GaAs pseudomorphic heterojunction barriers (<i>x</i>=0, 0.03, and 0.06)
Built-in biaxial strain dependence of Γ-<i>X</i> transport in GaAs/In<i>x</i>Al1−<i>x</i>As/GaAs pseudomorphic heterojunction barriers (<i>x</i>=0, 0.03, and 0.06) Open
The effects of built-in biaxial strain on Γ-X transport in n-GaAs/i-InxAl1−xAs/n-GaAs pseudomorphic single-barrier structures (x=0, 0.03, and 0.06) are studied by measuring temperature-dependent I-V characteristics. For the accurate charac…
View article: Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors
Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors Open
The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrie…
View article: <i>C</i>-<i>V</i> and <i>I</i>-<i>V</i> characteristics of quantum well varactors
<i>C</i>-<i>V</i> and <i>I</i>-<i>V</i> characteristics of quantum well varactors Open
A theoretical model for quantum well varactors is presented. The model is used to calculate the device C-V and I-V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a tr…
View article: InGaAs/InP hot electron transistors grown by chemical beam epitaxy
InGaAs/InP hot electron transistors grown by chemical beam epitaxy Open
In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential β (dIC/dIB) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts wit…
View article: Thermionic emission current in a single barrier varactor
Thermionic emission current in a single barrier varactor Open
From I-V measurements on Single Barrier Varactors (SBV) at different temperatures we concluded that thermionic emission across the barrier of the actual device is mainly due to transport through the X band. The same structure was also mode…
View article: Superlattice barrier varactors
Superlattice barrier varactors Open
SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in…
View article: Planar doped barrier subharmonic mixers
Planar doped barrier subharmonic mixers Open
The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to revers…
View article: Ensemble Monte Carlo characterization of graded Al<i>x</i>Ga1−<i>x</i>As heterojunction barriers
Ensemble Monte Carlo characterization of graded Al<i>x</i>Ga1−<i>x</i>As heterojunction barriers Open
Injection over and through heterojunction barriers is becoming increasingly more important in modern electronic devices. We consider the properties of graded AlxGa1−xAs heterojunction barriers using a self-consistent ensemble Monte Carlo m…
View article: Nonalloyed and alloyed low-resistance ohmic contacts with good morphology for GaAs using a graded InGaAs cap layer
Nonalloyed and alloyed low-resistance ohmic contacts with good morphology for GaAs using a graded InGaAs cap layer Open
Using a thin graded layer of InGaAs starting on GaAs and becoming InAs on the top, low-resistance alloyed and nonalloyed ohmic contacts have been achieved on n+-GaAs epilayers grown by molecular-beam epitaxy on a semi-insulating GaAs subst…