J.Y.-C. Sun
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View article: 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters Open
The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely, narrow basewidths and preservation of lightly…
View article: RAPID THERMAL PROCESSING OF ARSENIC-IMPLANTED POLYSILICON ON VERY THIN OXIDE
RAPID THERMAL PROCESSING OF ARSENIC-IMPLANTED POLYSILICON ON VERY THIN OXIDE Open
We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work function for arsenic-implanted polysilicon gate on 7 nm SiO2 in a dual work function (n+ and p+) poly-gate CMOS process. Interfa…