Jaewon Wang
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View article: Wafer‐Scale Fabrication of Edge‐Contacted Nanosheet Transistors via Alloying‐Mediated Phase Engineering
Wafer‐Scale Fabrication of Edge‐Contacted Nanosheet Transistors via Alloying‐Mediated Phase Engineering Open
Edge contacts offer significant potential for scaling down 2D transistors due to their minimal contact resistance and reduced contact length. However, their intricate fabrication complicates reproducible large‐scale production and evaluati…
View article: Interfacial Control of Degradation Pathways in 2D Heterostructures
Interfacial Control of Degradation Pathways in 2D Heterostructures Open
In two‐dimensional (2D) electronic devices, heterointerfaces between dissimilar 2D materials are essential for mechanical support and electrical integration, yet they can alter interfacial electronic structure and reaction kinetics. The lo…
View article: Water‐ and oxidation‐resistant <scp>MXenes</scp> for advanced <scp>electromagnetic interference</scp> shielding applications
Water‐ and oxidation‐resistant <span>MXenes</span> for advanced <span>electromagnetic interference</span> shielding applications Open
Two‐dimensional transition metal carbides and nitrides (MXenes) show great promise for electromagnetic interference (EMI) shielding. However, their susceptibility to oxidation, particularly in humid environments or water, limits their indu…
View article: Ultrahigh Conductive MXene Films for Broadband Electromagnetic Interference Shielding
Ultrahigh Conductive MXene Films for Broadband Electromagnetic Interference Shielding Open
Broadband and ultrathin electromagnetic interference (EMI)‐shielding materials are crucial for efficient high‐frequency data transmission in emerging technologies. MXenes are renowned for their outstanding electrical conductivity and EMI‐s…
View article: Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length
Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length Open
The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally a…
View article: Synthesis of high quality 2D carbide MXene flakes using a highly purified MAX precursor for ink applications
Synthesis of high quality 2D carbide MXene flakes using a highly purified MAX precursor for ink applications Open
A method of pelletizing raw materials was used to tackle unwarranted variations in MXene products depending on the parent MAX phases, manufacturing techniques, and preparation parameters, enabling a direct painting process on various surfa…
View article: Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities
Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities Open
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications. The most significant challenge for 2D vdW materials i…
View article: Metallic Transition‐Metal Chalcogenides: Electrically Robust Single‐Crystalline WTe<sub>2</sub> Nanobelts for Nanoscale Electrical Interconnects (Adv. Sci. 3/2019)
Metallic Transition‐Metal Chalcogenides: Electrically Robust Single‐Crystalline WTe<sub>2</sub> Nanobelts for Nanoscale Electrical Interconnects (Adv. Sci. 3/2019) Open
In article number 1801370, Soon‐Yong Kwon and co‐workers investigate single‐crystalline WTe2 nanobelts from a eutectic metal alloy, which can be a prominent interconnect candidate because of their superior electrical performance and robust…
View article: Electrically Robust Single‐Crystalline WTe<sub>2</sub> Nanobelts for Nanoscale Electrical Interconnects
Electrically Robust Single‐Crystalline WTe<sub>2</sub> Nanobelts for Nanoscale Electrical Interconnects Open
As the elements of integrated circuits are downsized to the nanoscale, the current Cu‐based interconnects are facing limitations due to increased resistivity and decreased current‐carrying capacity because of scaling. Here, the bottom‐up s…