James G. Champlain
YOU?
Author Swipe
View article: Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy Open
We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on high-ScN-…
View article: Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis
Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis Open
A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly repres…
View article: Propagon boundary scattering relaxed via crystalline host on multiphase germanium telluride
Propagon boundary scattering relaxed via crystalline host on multiphase germanium telluride Open
The movement of heat through amorphous solids on an atomic level remains an outstanding question. Recent studies suggest that the primary thermal carrier in amorphous materials, propagons, essentially behaves like phonons. In this work, we…
View article: First-principles study and experimental characterization of metal incorporation in germanium telluride
First-principles study and experimental characterization of metal incorporation in germanium telluride Open
Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping an…
View article: Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 Open
Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative different…
View article: Examination of the temperature dependent electronic behavior of GeTe for switching applications
Examination of the temperature dependent electronic behavior of GeTe for switching applications Open
The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exh…