Jan Benick
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View article: Fully‐Textured Perovskite/Silicon Tandem Solar Cells Exceeding 30% Efficiency on Both Side Tunnel Oxide Passivating Contacted Bottom Cells
Fully‐Textured Perovskite/Silicon Tandem Solar Cells Exceeding 30% Efficiency on Both Side Tunnel Oxide Passivating Contacted Bottom Cells Open
The bottom solar cell (BSC) plays a pivotal role in perovskite/silicon tandem solar cells (TSC), not only contributing to the total energy output but also influencing the perovskite formation with its surface properties when used as a subs…
View article: TOPCon Solar Cells Made of n‐Type and p‐Type Epitaxially Grown Silicon Wafers
TOPCon Solar Cells Made of n‐Type and p‐Type Epitaxially Grown Silicon Wafers Open
In the growing silicon photovoltaic module production, the crystalline silicon (c‐Si) wafers represent the most energy‐intensive process steps. Epitaxially grown c‐Si wafers (EpiWafers) detached from reusable substrates allow a significant…
View article: Influence of Thermal Activation on Polysilicon Tunnel Junctions for Tunnel Oxide Passivating Contacts‐Based Perovskite/Silicon Tandem Solar Cells
Influence of Thermal Activation on Polysilicon Tunnel Junctions for Tunnel Oxide Passivating Contacts‐Based Perovskite/Silicon Tandem Solar Cells Open
The presented investigation focuses on different thermal activation processes and their influence on the formation of a polysilicon tunnel junction as a recombination layer in perovskite/silicon tandem solar cells. The goals of this invest…
View article: Hydrogenation characteristics of p-type poly-Si passivating contacts on textured surface for double-sided TOPCon devices
Hydrogenation characteristics of p-type poly-Si passivating contacts on textured surface for double-sided TOPCon devices Open
An effective hydrogenation process for polycrystalline silicon based passivating contacts (TOPCon) is crucial to achieve a very high level of surface passivation. This work examines the hydrogenation characteristics of p-type TOPCon on tex…
View article: Approaches for reducing metallization-induced losses in industrial TOPCon solar cells
Approaches for reducing metallization-induced losses in industrial TOPCon solar cells Open
Minimizing carrier recombination in silicon solar cells is key to increase the conversion efficiency, as recombination affects both the fill factor and the open circuit voltage. Recombination at metal-semiconductor interfaces plays a cruci…
View article: Key Aspects of p-Type TOPCon on Textured Surface for Silicon Bottom Cells in Tandem Devices
Key Aspects of p-Type TOPCon on Textured Surface for Silicon Bottom Cells in Tandem Devices Open
Both-sides TOPCon solar cells are an interesting candidate for a highly efficient and thermally robust Silicon (Si) bottom cell for tandem devices, such as Perovskite-Si solar cells. However, preparation of p-type TOPCon on a textured surf…
View article: Optical Analysis of Perovskite/Silicon Tandem Solar Cells: Effect of Rear Side Grating and TOPCon Tunnel Junction
Optical Analysis of Perovskite/Silicon Tandem Solar Cells: Effect of Rear Side Grating and TOPCon Tunnel Junction Open
In the focus of the presented work is the analysis of a rear side reflection grating in context of a perovskite/silicon tandem solar cell. The typical configuration of a perovskite/Si tandem device requires a hole transport layer at the re…
View article: Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production
Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production Open
Plasma-Enhanced Chemical Vapor Deposition (PECVD) is an attractive tool for TOPCon production, as it enables uniformly in situ doped amorphous silicon (a-Si) and dielectric layer depositions with high throughput. However, a lean process re…
View article: Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell
Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell Open
We investigated the electrical characteristics of tunnel oxide passivated contact (TOPCon) solar cells fabricated by ion implantation using a beam line ion implantation (beam line) system and a plasma immersion ion implantation (PIII) syst…
View article: Bias-voltage photoconductance and photoluminescence for the determination of silicon-dielectric interface properties in SiO2/Al2O3 stacks
Bias-voltage photoconductance and photoluminescence for the determination of silicon-dielectric interface properties in SiO2/Al2O3 stacks Open
This paper presents an advanced measurement method for controlling the surface charge carrier density of passivated silicon wafers during photoconductance and photoluminescence measurements, by employing semitransparent poly(3,4-ethylenedi…
View article: Improved Silicon Surface Passivation by ALD Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Multilayers with In‐Situ Plasma Treatments
Improved Silicon Surface Passivation by ALD Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Multilayers with In‐Situ Plasma Treatments Open
Al 2 O 3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thic…
View article: Simultaneous Boron Emitter Diffusion and Annealing of Tunnel Oxide Passivated Contacts Via Rapid Vapor-Phase Direct Doping
Simultaneous Boron Emitter Diffusion and Annealing of Tunnel Oxide Passivated Contacts Via Rapid Vapor-Phase Direct Doping Open
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View article: Al2O3/SiNx stacks with ozone-based ALD Al2O3 for surface passivation: Superior layer stability after firing
Al2O3/SiNx stacks with ozone-based ALD Al2O3 for surface passivation: Superior layer stability after firing Open
We present a systematic study on effective passivation of p-type crystalline silicon (c-Si) by Al2O3 and Al2O3/SiNx stacks. Ozone-based atomic layer deposition (ALD) Al2O3 was deposited with varied thickness, ozone concentration and deposi…
View article: Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g
Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g Open
III–V//Si multijunction solar cells offer a pathway to increase the power conversion efficiency beyond the fundamental Auger limit of silicon single‐junctions. In this work, we demonstrate how the efficiency of a two‐terminal wafer‐bonded …
View article: Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As<sub><i>y</i></sub>P<sub>1−<i>y</i></sub> Step‐Graded Buffer Structures
Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As<sub><i>y</i></sub>P<sub>1−<i>y</i></sub> Step‐Graded Buffer Structures Open
III–V/Si multi‐junction solar cells are potential successors to the silicon single‐junction cell due to their efficiency potential of up to 40% in the radiative limit. [1] Herein, latest results of epitaxially integrated GaInP/GaAs/Si trip…
View article: Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%
Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1% Open
The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonde…
View article: 34.1 % Efficient GaInP/AlGaAs//Si Tandem Cell
34.1 % Efficient GaInP/AlGaAs//Si Tandem Cell Open
III-V/Si tandem solar cells are investigated as a promising solution to increase the power output of photovoltaic modules under terrestrial sunlight conditions. Over the last years, we have developed a wafer-bonded GaInP/AlGaAs//Si triple-…
View article: Advances in Epitaxial GaInP/GaAs/Si Triple Junction Solar Cells
Advances in Epitaxial GaInP/GaAs/Si Triple Junction Solar Cells Open
Epitaxial III-V on silicon multi-junction solar cells allow to increase the conversion efficiency of single-junction silicon devices. We report progress on the development of high-efficiency GaInP/GaAs/Si triple-junction devices over the l…
View article: Silicon solar cell–integrated stress and temperature sensors for photovoltaic modules
Silicon solar cell–integrated stress and temperature sensors for photovoltaic modules Open
We propose silicon solar cell–integrated stress and temperature sensors as a new approach for the stress and temperature measurement in photovoltaic (PV) modules. The solar cell–integrated sensors enable a direct and continuous in situ mea…
View article: Simultaneous Boron Emitter Diffusion and Crystallization of TOPCon Layers via Rapid Vapour-Phase Direct Doping
Simultaneous Boron Emitter Diffusion and Crystallization of TOPCon Layers via Rapid Vapour-Phase Direct Doping Open
The alternative boron emitter diffusion process rapid vapour phase direct doping (B-RVD) is applied to n-type silicon wafers with tunnel oxide passivated contact (TOPCon) rear sides. A variation of the B-RVD process parameters led to an in…
View article: Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency
Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency Open
III–V on Si multijunction solar cells exceede the efficiency limit of Si single‐junction devices but are often challenged by expensive layer transfer techniques. Here, progress in the development of direct epitaxial growth for GaInP/GaAs/S…
View article: Both Sides Contacted Silicon Solar Cells: Options for Approaching 26% Efficiency
Both Sides Contacted Silicon Solar Cells: Options for Approaching 26% Efficiency Open
Recently, we demonstrated an efficiency of 25.8% for a both sides contacted silicon solar cell. These cells were realized on n-type Si featuring a boron-doped p+ emitter at the front surface and a full-area tunnel oxide passivating contact…
View article: Large Area TOPCon Cells Realized by a PECVD Tube Process
Large Area TOPCon Cells Realized by a PECVD Tube Process Open
TOPCon is an appealing choice for next-generation solar cells as it minimizes surface recombination, enables low contact resistivities, and provides high thermal stability thereby rendering it compatible with screen-printed metallization. …
View article: Direct Growth of III–V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency
Direct Growth of III–V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency Open
Monolithic multi-junction solar cells made on active silicon substrates are a promising pathway for low-cost high-efficiency devices. We present results of GaInP/GaAs/Si triple-junction solar cells, fabricated by direct growth on silicon i…
View article: Photonic structures for III-V//Si multijunction solar cells with efficiency >33%
Photonic structures for III-V//Si multijunction solar cells with efficiency >33% Open
Silicon based multi-junction solar cells are a promising option to overcome the theoretical efficiency limit of a silicon solar cell (29.4%). With III-V semiconductors, high bandgap materials applicable for top cells are available. For the…