Jane P. Chang
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View article: Recidivism and Peer Influence with LLM Text Embeddings in Low Security Correctional Facilities
Recidivism and Peer Influence with LLM Text Embeddings in Low Security Correctional Facilities Open
We find AI embeddings obtained using a pre-trained transformer-based Large Language Model (LLM) of 80,000-120,000 written affirmations and correction exchanges among residents in low-security correctional facilities to be highly predictive…
View article: Future of plasma etching for microelectronics: Challenges and opportunities
Future of plasma etching for microelectronics: Challenges and opportunities Open
Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evo…
View article: Science challenges and research opportunities for plasma applications in microelectronics
Science challenges and research opportunities for plasma applications in microelectronics Open
Low-temperature plasmas (LTPs) are essential to manufacturing devices in the semiconductor industry, from creating extreme ultraviolet photons used in the most advanced lithography to thin film etching, deposition, and surface modification…
View article: Cost-effectiveness of avelumab first-line maintenance therapy for adult patients with locally advanced or metastatic urothelial carcinoma in France
Cost-effectiveness of avelumab first-line maintenance therapy for adult patients with locally advanced or metastatic urothelial carcinoma in France Open
Background This study evaluated the cost-effectiveness of avelumab first-line (1L) maintenance therapy plus best supportive care (BSC) versus BSC alone for adults with locally advanced or metastatic urothelial carcinoma (la/mUC) that had n…
View article: The 2022 applied physics by pioneering women: a roadmap
The 2022 applied physics by pioneering women: a roadmap Open
Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating …
View article: Strain transfer in porous multiferroic composites of CoFe2O4 and PbZr<i>x</i>Ti1−<i>x</i>O3
Strain transfer in porous multiferroic composites of CoFe2O4 and PbZr<i>x</i>Ti1−<i>x</i>O3 Open
This manuscript examines the mechanism of strain-coupling in a multiferroic composite of mesoporous cobalt ferrite (CFO), conformally filled with lead zirconate titanate (PZT). We find that when the composites are electrically poled, reman…
View article: Magnetic state switching in FeGa microstructures
Magnetic state switching in FeGa microstructures Open
This work demonstrates that magnetoelectric composite heterostructures can be designed at the length scale of 10 µ ms that can be switched from a magnetized state to a vortex state, effectively switching the magnetization off, using electr…
View article: Plasma enhanced atomic layer deposition of thin film Li1+xMn2−xO4 for realization of all solid-state 3D lithium-ion microbatteries
Plasma enhanced atomic layer deposition of thin film Li1+xMn2−xO4 for realization of all solid-state 3D lithium-ion microbatteries Open
The plasma enhanced atomic layer deposition (PEALD) process for MnO2 was demonstrated, exhibiting self-limiting growth as well as stable composition and stable growth rate over a temperature window of 205–265 °C. The PEALD process for MnO2…
View article: Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO<sub>4</sub> Thin-Film Solid Electrolytes
Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO<sub>4</sub> Thin-Film Solid Electrolytes Open
Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO4 phase. The rapid thermal annealed ALD film developed …
View article: Review Article: Plasma–surface interactions at the atomic scale for patterning metals
Review Article: Plasma–surface interactions at the atomic scale for patterning metals Open
Building upon the depth and breadth of Harold Winters's work, this paper pays tribute to his pioneering contribution in the field of plasma etching of metals, and how that knowledge base helps guide the fundamental research in these areas.…
View article: Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?
Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? Open
In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control o…
View article: Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface Open
We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB|MgO interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic properties. Inserting a very thin Mg layer of 0.1–0.3 nm yielded a V…
View article: Metal oxide core shell nanostructures as building blocks for efficient light emission (SISGR)
Metal oxide core shell nanostructures as building blocks for efficient light emission (SISGR) Open
The objective of this research is to synthesize core-shell nano-structured metal oxide materials and investigate their structural, electronic and optical properties to understand the microscopic pathways governing the energy conversion pro…
View article: A Material Framework for Beyond-CMOS Devices
A Material Framework for Beyond-CMOS Devices Open
Beyond-CMOS devices concepts are greatly dependent on new functional materials to provide inspiration and innovation beyond the silicon status quo. Here, we propose a material framework specifically for beyond-CMOS devices. In doing so, ma…