Janusz Bogdanowicz
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View article: Apparent size effects on dopant activation in nanometer-wide Si fins
Apparent size effects on dopant activation in nanometer-wide Si fins Open
Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in …
View article: Electrical Contact Formation in Micro Four‐Point Probe Measurements
Electrical Contact Formation in Micro Four‐Point Probe Measurements Open
Herein, the electrical contact formation between the electrodes of the micro four‐point technique and a semiconducting sample is described. It is shown that the contact is formed in two stages: a voltage‐induced electrical contact formatio…
View article: Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration Open
As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introd…
View article: #AiMES2018_20181002_1400_Low-T-SiGe_Porret
#AiMES2018_20181002_1400_Low-T-SiGe_Porret Open
As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introd…
View article: A variable probe pitch micro-Hall effect method
A variable probe pitch micro-Hall effect method Open
Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterizati…
View article: Electrical characterization of single nanometer-wide Si fins in dense arrays
Electrical characterization of single nanometer-wide Si fins in dense arrays Open
This paper demonstrates the development of a methodology using the micro four-point probe (μ4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully cont…
View article: Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation
Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation Open
View article: Mobility and Carrier Concentration Measurements on nm-Wide Semiconductor Fins
Mobility and Carrier Concentration Measurements on nm-Wide Semiconductor Fins Open
View article: Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe
Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe Open
This paper extends the applicability of the micro four‐point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, …
View article: Atom probe tomography analysis of SiGe fins embedded in SiO 2 : Facts and artefacts
Atom probe tomography analysis of SiGe fins embedded in SiO 2 : Facts and artefacts Open
View article: Precision of Micro Hall Effect Measurements in Scribe Line Test Pads
Precision of Micro Hall Effect Measurements in Scribe Line Test Pads Open
View article: Precision of Micro Hall Effect Measurements in Scribe Line Test Pads of B-doped SiGe
Precision of Micro Hall Effect Measurements in Scribe Line Test Pads of B-doped SiGe Open
View article: Nanofocusing of light into semiconducting fin photonic crystals
Nanofocusing of light into semiconducting fin photonic crystals Open
This letter demonstrates experimentally and investigates theoretically the possibility for enhanced light coupling into periodic arrays of nanoscale semiconducting fins. Using Raman spectroscopy, we show that an electromagnetic field impin…