Jarod Meyer
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View article: Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared Open
PbSe is a narrow bandgap IV–VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline-earth or rare-earth elements such as Sr and Eu can substitute Pb to widen the bandg…
View article: Heteroepitaxial growth of highly anisotropic $Sb_{2}Se_{3}$ films on GaAs
Heteroepitaxial growth of highly anisotropic $Sb_{2}Se_{3}$ films on GaAs Open
The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In this work, we synthesize heteroepitaxial thin films of ort…
View article: Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared Open
PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elements such as Sr and Eu can substitute Pb to widen the bandg…
View article: Engineering PbSnSe Heterostructures for Luminescence Out to 8 µm at Room Temperature
Engineering PbSnSe Heterostructures for Luminescence Out to 8 µm at Room Temperature Open
Low‐cost, room‐temperature operating light emitters in the 3–8 µm mid‐wave infrared wavelengths are desired for a broad range of applications such as chemical spectroscopy and infrared scene projection. The photoluminescence properties of …
View article: Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates Open
PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emerging class of IV-VI/III-V heterostructures. The synthesis of …
View article: Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs Open
We report on photoluminescence in the 3–7 µm mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatu…
View article: Bright mid-infrared photoluminescence from high dislocation density\n epitaxial PbSe films on GaAs
Bright mid-infrared photoluminescence from high dislocation density\n epitaxial PbSe films on GaAs Open
We report on photoluminescence in the 3-7 $\\mu$m mid-wave infrared (MWIR)\nrange from sub-100 nm strained thin films of rocksalt PbSe(001) grown on\nGaAs(001) substrates by molecular beam epitaxy. These bare films, grown\nepitaxially at t…
View article: Systematic study of shockley-read-hall and radiative recombination in GaN on Al<sub>2</sub>O<sub>3</sub>, freestanding GaN, and GaN on Si
Systematic study of shockley-read-hall and radiative recombination in GaN on Al<sub>2</sub>O<sub>3</sub>, freestanding GaN, and GaN on Si Open
Here we study and correlate structural, electrical, and optical properties of three GaN samples: GaN grown by metalorganic chemical vapor deposition on sapphire (GaN/Al 2 O 3 ), freestanding GaN crystals grown by the high nitrogen pressure…