Jay Mathews
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Hyperdoping SiGe with S using ion implantation and pulsed laser melting for infrared absorption and detection Open
Hyperdoping of Si has been demonstrated to induce sub-bandgap absorption through the formation of intermediate bands (IBs). In this work, a p-type SiGe film with 16% Ge grown on Si was hyperdoped with S. Optical absorption measurements sho…
Enhancing performance of Au-hyperdoped Si photodetectors for infrared detection Open
Hyperdoping Si with transition metals to form intermediate bands for infrared absorption has attracted attention recently for producing sub-bandgap photoconductivity. In particular, Si hyperdoped with Au has been demonstrated to exhibit op…
Carrier lifetimes in gold–hyperdoped silicon—Influence of dopant incorporation methods and concentration profiles Open
Incorporating ultrahigh concentrations of deep-level dopants in silicon drastically alters silicon’s optoelectronic properties. Photodiodes built from silicon hyperdoped with gold extend light sensitivity into the shortwave infrared region…
Room temperature emission spectroscopy of GeSn waveguides under optical pumping Open
Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spec…
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density Open
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in …
Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting Open
Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a promising method to realize this material due to its high r…
Influence of symmetry breaking on Fano-like resonances in high Figure of Merit planar terahertz metafilms Open
It is well established that nearly all high-quality (Q) Fano-like resonances in terahertz (THz) metasurfaces broaden as asymmetry increases, resulting in a decline of Q-factor and an increase in the resonance intensity. Therefore, in order…
Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling Open
We demonstrate a classical analogue of electromagnetically induced transparency (EIT) in a highly flexible planar terahertz metamaterial (MM) comprised of three-gap split ring resonators. The keys to achieve EIT in this system are the freq…
Polarization-dependent electromagnetic responses of ultrathin and highly flexible asymmetric terahertz metasurfaces Open
We report the polarization-dependent electromagnetic response from a series of novel terahertz (THz) metasurfaces where asymmetry is introduced through the displacement of two adjacent metallic arms separated by a distance $δ$. For all pol…
All-optical switching via four-wave mixing Bragg scattering in a silicon platform Open
We employ the process of non-degenerate four-wave mixing Bragg scattering to demonstrate all-optical control in a silicon platform. In our configuration, a strong, non-information-carrying pump is mixed with a weak control pump and an inpu…
Effect of layer thickness on device response of silicon heavily supersaturated with sulfur Open
We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average s…