J. C. Read
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View article: Magnetic switching fluctuations from sidewall oxides in MgO/FeCoB magnetic tunnel junctions
Magnetic switching fluctuations from sidewall oxides in MgO/FeCoB magnetic tunnel junctions Open
Sharp magnetic switching distributions with coupling to magnetic sidewall oxides in FeCoB/MgO magnetic tunnel junctions (MTJs) are revealed by magneto-resistance first order reversal curve (MR-FORC) measurements. Tunneling magneto-resistan…
View article: Correlating Nanoscale Defects with Electronic Properties in MgO Magnetic Tunnel Junctions by Aberration-Corrected STEM-EELS
Correlating Nanoscale Defects with Electronic Properties in MgO Magnetic Tunnel Junctions by Aberration-Corrected STEM-EELS Open
Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
View article: Disorder, defects and bandgaps in ultra thin (001) MgO tunnel barrier layers
Disorder, defects and bandgaps in ultra thin (001) MgO tunnel barrier layers Open
We report scanning tunneling spectroscopy studies of the electronic structure of 1.5 to 3 nm (001) textured MgO layers grown on (001) Fe. Thick MgO layers exhibit a bulk-like band gap, approximately 5-7 eV, and sparse, localized defect sta…
View article: Tunneling spectroscopy studies of treated aluminum oxide tunnel barrier layers
Tunneling spectroscopy studies of treated aluminum oxide tunnel barrier layers Open
We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed…
View article: Oxygen stoichiometry and instability in aluminum oxide tunnel barrier layers
Oxygen stoichiometry and instability in aluminum oxide tunnel barrier layers Open
We present X-ray photoelectron spectroscopy data which show that the\nchemisorbed oxygen previously observed to be on the surface of thin AlOx layers\nformed by room temperature thermal oxidation is bound by oxygen vacancies in\nthe oxide.…