Jean‐Baptiste Rodriguez

A topological field-effect memristor Open

S. S. Krishtopenko, A. Wolf, Monika Emmerling, Sebastian C. Schmid, Jean‐Baptiste Rodriguez , et al. · 2025

Overcoming the limitations of the von Neumann architecture requires new computational paradigms capable of solving complex problems efficiently. Quantum and neuromorphic computing rely on unconventional materials and device functionalities…

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy Open

Laure Tailpied, Clément Gureghian, Frédéric Fossard, Jean‐Sébastien Mérot, Jean‐Baptiste Rodriguez , et al. · 2025

While high operating temperature infrared photodetection remains a major technological objective, huge improvements have been obtained through the use of increasingly complex semiconductors epitaxies such as quantum cascade structures or I…

Midinfrared Semiconductor Photonics - A Roadmap Open

J. R. Meyer, I. Vurgaftman, S. -Q. Yu, Rui Yang, A. M. Andrews , et al. · 2025

Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of current practical needs. These include chemical sensing, envir…

Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics Open

Manuel Meyer, J. I. Baumbach, S. S. Krishtopenko, A. Wolf, Monika Emmerling , et al. · 2025

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…

MBE growth of GaSb on Ge-based templates grown on Si for mid-infrared photonics [Invited] Open

Mary Claire Silvestre, Sébastien Lacaze, Audrey Gilbert, Stefano Calcaterra, Afonso DE CERDEIRA OLIVEIRA , et al. · 2025

We study the molecular beam epitaxy of GaSb layers on Ge-based templates grown on Si substrates by low-energy plasma-enhanced chemical vapor deposition. First, we study the growth mechanism to obtain a GaSb surface free of emerging antipha…

High performance GaSb-based interband cascade lasers emitting at 4.7 µm grown on GaAs and Si substrates Open

Maëva Fagot, D. A. Díaz-Thomas, Audrey Gilbert, Michel Ramonda, Yves Rouillard , et al. · 2025

Strain relief and threading dislocation reduction in GaSb/AlSb/GaSb heterostructures grown on Si(001) substrate Open

Karl Graser, Audrey Gilbert, Jean‐Baptiste Rodriguez, E. Tournié, A. Trampert · 2025

The monolithic integration of III-Sb materials on Si substrates enables the development of novel functionalities and promising device applications. However, due to the large lattice mismatch to Si, direct heteroepitaxy of III-Sb results in…

Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing Open

D. A. Díaz-Thomas, Diba Ayache, Maëva Fagot, Zeineb Loghmari, Audrey Gilbert , et al. · 2025

A single mode distributed feedback (DFB) interband cascade laser (ICL) grown on a (001) Si substrate has been developed. The designed DFB ICL with a grating on top of the ridge emits at a wavelength near 3.4 μm, suited for methane gas sens…

Multiprobe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence Open

S. Benlemqwanssa, S. S. Krishtopenko, Manuel Meyer, B. Benhamou–Bui, L. Bonnet , et al. · 2024

International audience

Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy Open

Audrey Gilbert, Karl Graser, Michel Ramonda, A. Trampert, Jean‐Baptiste Rodriguez , et al. · 2024

The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading …

Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence Open

S. Benlenqwanssa, S. S. Krishtopenko, M. Meyer, B. Benhamou–Bui, Laurent Bonnet , et al. · 2024

We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall…

Improved light transmission for III-V lasers monolithically integrated on Si platforms Open

Michele Paparella, Andres Remis, Marco Grande, T. Taliercio, L. Cerutti , et al. · 2024

We propose a strategy to monolithically integrate active III-V lasers and passive dielectric devices, where the passive waveguides are fabricated after the MBE growth of the III-V semiconductors on a planar Si substrate. This avoids any ai…

The direct epitaxial growth of III-Vs on Silicon substrate Open

Audrey Gilbert, E. Tournié, G. Patriarche, Charles Cornet, Michel Ramonda , et al. · 2024

National audience

Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon Open

H. Kim, Pierre Didier, Sara Zaminga, D. A. Díaz-Thomas, А. Н. Баранов , et al. · 2024

Interband cascade lasers typically have significantly lower threshold current and power consumption than quantum cascade lasers. They can also have advantages regarding costs and compactness with the photonic integration onto silicon subst…

Revisiting the epitaxy of III-Vs on group-IV substrates Open

Audrey Gilbert, G. Patriarche, Charles Cornet, E. Tournié, Michel Ramonda , et al. · 2024

International audience

New InGaAsSb based T2SL for MWIR detection Open

Théo Sabardeil, Eva Izquierdo, Gabin Grégoire, B. Simozrag, Virginie Trinité , et al. · 2024

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy Open

Audrey Gilbert, Michel Ramonda, G. Patriarche, E. Tournié, Jean‐Baptiste Rodriguez · 2024

The monolithic integration of III‐Vs on Silicon (Si) is of great interest for the development of active photonic integrated circuits (PICs). The main challenge is to achieve a high‐quality epitaxy of the III‐V on the Si substrate, as the d…

Single mode distributed feedback interband cascade lasers grown on Si substrate Open

Daniel Andrés Díaz Thomas, Maëva Fagot, Gad Ndemengoye-Kombila, Audrey Gilbert, Diba Ayache , et al. · 2024

International audience

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates Open

Maëva Fagot, D. A. Díaz-Thomas, Audrey Gilbert, Gad Kombila, Michel Ramonda , et al. · 2024

We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on Ga…

Performance of long-wave infrared band of microstructured heavily doped InAsSb on type II superlattice layer part 1: the photonic study Open

Clément Gureghian, Jean‐Baptiste Rodriguez, Christophe Dupuis, Nathalie Bardou, L. Ferlazzo , et al. · 2024

This article deals with the optical study of nanostructured components which absorb light across the entire long-wave infrared (LWIR) spectral band. The components are made of type-II superlattice (T2SL) absorber and highly doped InAsSb, t…

Engineering the Infrared Optical Response of Plasmonic Structures with ϵ‐Near‐Zero III‐V Semiconductors Open

Pierre Fehlen, Julien Guise, Guillaume F. Thomas, F. González‐Posada, Patricia Loren , et al. · 2023

The pursuit for enhanced light‐matter interactions using ever more suitable plasmonic materials has led to the development of novel bulk materials, such as ϵ‐near‐zero (ENZ) media. The ability to control the free carrier density gives semi…

0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation Open

Julien Guise, H. Ratovo, Monique Thual, Jeffrey L. Hesler, Theodore Reck , et al. · 2023

International audience

Photonique THz : Lumière laser structurée pour l'émission THz & modulation THz pilotée par laser Open

Adrián Bartolo, Julien Guise, G. Beaudoin, Luc Legratiet, Laurent Couraud , et al. · 2023

International audience

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides Open

Andres Remis, Laura Monge‐Bartolome, Michele Paparella, Audrey Gilbert, G. Boissier , et al. · 2023

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying Open

Audrey Gilbert, Michel Ramonda, L. Cerutti, Charles Cornet, G. Patriarche , et al. · 2023

This work reports on the precise control of III‐V semiconductors’ antiphase domain formation and evolution during the epitaxial growth on an “on‐axis” Si (001) substrate with a very low but controlled miscut. Especially, it is shown how, s…

Dark current reduction with all-semiconductors nanostructured type-II superlattice LWIR photodetector Open

Clément Gureghian, Grégory Vincent, Jean‐Baptiste Rodriguez, Guilherme Sombrio, Fernando Gonzalez Posada , et al. · 2023

International audience

Effect of dislocations on the performance of GaSb-based diode lasers grown on silicon Open

Andres Remis, Laura Monge‐Bartolome, G. Boissier, Mounir Waguaf, Jean‐Baptiste Rodriguez , et al. · 2023

Silicon photonics is a promising technology for the fabrication of dense photonic chips, thanks to the very mature silicon industry. The direct epitaxial growth of III–V lasers on silicon is one of the main challenges for the realization o…

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells Open

C. Avogadri, S. Gebert, S. S. Krishtopenko, Isaac Pérez Castillo, C. Conséjo , et al. · 2022

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb\nquantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The\nformer however features a band-gap vanishing with temperature, while the gap in\nInA…

Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms Open

Michele Paparella, Laura Monge Barlome, Jean‐Baptiste Rodriguez, L. Cerutti, Marco Grande , et al. · 2022

International audience

Quantum cascade lasers monolithically integrated on germanium Open

Kumar Kinjalk, A. Gilbert, Andres Remis, Z. Loghmari, L. Cerutti , et al. · 2022

Silicon (Si) photonics can have a major impact on the development of mid-IR photonics by leveraging on the reliable and high-volume fabrication technologies already developed for microelectronic integrated circuits. Germanium (Ge), already…

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