Jeong‐Taek Lim
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View article: Parameter Identification Algorithm for Li-ion Battery Based on Probabilistic Machine Learning Model
Parameter Identification Algorithm for Li-ion Battery Based on Probabilistic Machine Learning Model Open
본 연구에서는 새로운 리튬이온배터리 성능 열화 모델과 확률적 머신러닝 모델기반의 리튬이온배터리 파라미터 추정 방법을 제안하였으며 실제 배터리 열화 싸이클 실험 데이터를 통해 검증이 이루어졌다. 제안된 확률적 머신러닝 모델기반의 파라미터 추정 방법은 다른 방법들과 비교하여 더 적은 배터리 모델 구동 시간이 요구되어 효율적인 파라미터 추정이 가능하다. 리튬이온배터리 성능 열화 모델은 등가회로 기반의 모델이지만 다양한 전기화학적인…
View article: Development of an L-Band Low-Noise Amplifier for GPS RF Front-End Receiver
Development of an L-Band Low-Noise Amplifier for GPS RF Front-End Receiver Open
In the front-end receiver of a GPS, the noise figure is extremely important and requires a low-noise amplifier with a low noise figure and small size. This study aims to investigate the design of an L-band low-noise amplifier using the 0.1…
View article: Development of an L-Band Low-Noise Amplifier for GPS RF Front-End Receiver
Development of an L-Band Low-Noise Amplifier for GPS RF Front-End Receiver Open
In the front-end receiver of a GPS, the noise figure is extremely important and requires a low-noise amplifier with a low noise figure and small size. This study aims to investigate the design of an L-band low-noise amplifier using the 0.1…
View article: Advancing Pet Biometric Identification: A State-of-the-Art Unified Framework for Dogs and Cats
Advancing Pet Biometric Identification: A State-of-the-Art Unified Framework for Dogs and Cats Open
The growing integration of companion animals, such as dogs and cats, into households and society, alongside increasing policies and laws for pet management, necessitates reliable identification systems. Traditional methods, such as collars…
View article: Designing a 4.4~5.0 GHz Low-Noise Amplifier using 0.5-μm GaAs pHEMT Technology
Designing a 4.4~5.0 GHz Low-Noise Amplifier using 0.5-μm GaAs pHEMT Technology Open
This paper discusses the design of a 4.4~5.0 GHz low-noise amplifier (LNA) using a 0.5-μm GaAs pHEMT process. The transistor size was optimized to address the mismatch between optimal noise and input impedance owing to the unique noise sou…
View article: Design and Analysis of an LO Chain for an IQ Receiver in a 77~81 GHz Short-Range Radar System
Design and Analysis of an LO Chain for an IQ Receiver in a 77~81 GHz Short-Range Radar System Open
This paper presents the design and analysis of an LO chain implemented using the CMOS 65 nm bulk process. The LO chain was fabricated for driving the short-range radar IQ mixer in the 77~81 GHz band. The LO chain comprised a poly phase fil…
View article: Designing a 3.5 GHz Doherty Power Amplifier Using GaAs HBT for 5G NR Communications
Designing a 3.5 GHz Doherty Power Amplifier Using GaAs HBT for 5G NR Communications Open
This paper discusses the design of a 3.5-GHz band Doherty power amplifier using a 0.5-μm GaAs process. The design was optimized through load-pull simulations, employing the second harmonic trap filter at the output of the peaking amplifier…
View article: Design of Drive Amplifier for W-Band RFIC
Design of Drive Amplifier for W-Band RFIC Open
This paper presents the design of a driving amplifier intended for use in W-band RFICs. The amplifier adopts a differential two-stage common-source configuration to ensure robust output power. Furthermore, it has been enhanced through the …
View article: Implementation of Rectenna for 2.45-GHz Wireless Power Transfer
Implementation of Rectenna for 2.45-GHz Wireless Power Transfer Open
This paper presents the design and fabrication of a rectenna that receives 2.45 GHz RF signals and converts them into DC power. The rectenna comprises a patch antenna, matching network, and rectifier. It was manufactured and measured using…
View article: Design of Down-Conversion Q-Boosting Mixer for W-Band Radar Systems
Design of Down-Conversion Q-Boosting Mixer for W-Band Radar Systems Open
This paper discusses the design of a W-band down-conversion mixer, fabricated using a 65-nm bulk CMOS process. The mixer employs a passive double-balanced structure, resulting in no power consumption. It includes LC matching circuits for R…
View article: W-Band CMOS Wilkinson Power Divider
W-Band CMOS Wilkinson Power Divider Open
This paper presents the design of W-band Wilkinson power divider using 65 nm bulk CMOS process. In this design, the quarter-wavelength (λ/4) transmission line was replaced with a lumped element, and a CRC structure was applied to the isola…
View article: 26.5∼29.5 GHz 6-Bit Switched-Filter Phase Shifter
26.5∼29.5 GHz 6-Bit Switched-Filter Phase Shifter Open
This paper presents a 6-bit phase shifter designed and fabricated using a 150-nm GaN HEMT process. The designed phase shifter operates in the n257 (26.5-29.5 GHz) band of the 5G NR standard, and the structure of a switched-filter phase shi…
View article: Design of W-Band Low-Noise Amplifier for Radar
Design of W-Band Low-Noise Amplifier for Radar Open
This article presents the design of a W-band wideband low-noise amplifier (LNA) using a 65-nm bulk complementary metal–oxide semiconductor process. A negative feedback transformer is used as an input matching network for wideband matching …
View article: Design of K-Band CMOS Low Noise Amplifier for Satellite Communication
Design of K-Band CMOS Low Noise Amplifier for Satellite Communication Open
This study entailed the design of a K-band low noise amplifier (LNA) by using the 65-nm bulk CMOS process. In the designed low noise amplifier, a large transistor was used to reduce the size of the lossy gate series inductor, resulting in …
View article: X-Band Combline Diplexer for Satellite
X-Band Combline Diplexer for Satellite Open
Diplexers are one of the key devices required to separate uplink and downlink signals in transceivers using a single grounded antenna. This study presents the design of an X-band diplexer for satellites. First, bandpass filters of the tran…
View article: Low Noise Amplifier with a Merged Duplexer
Low Noise Amplifier with a Merged Duplexer Open
In this paper, we present a low noise amplifier with a merged duplexer. The input matching network of the electrical balance duplexer(EBD) and the low-noise amplifier were integrated to minimize input insertion loss in the RX path. The low…
View article: 0.18 μm CMOS Power Amplifier for Subgigahertz Short-Range Wireless Communications
0.18 μm CMOS Power Amplifier for Subgigahertz Short-Range Wireless Communications Open
A power amplifier for subgigahertz short-range wireless communication using 0.18-μm CMOS technology is presented. It is designed as a differential structure to form easily a virtual ground node, to increase output power, and to design a ca…
View article: Miniaturized Q‐band ×8 frequency multiplier with optimized efficiency in 65‐nm CMOS technology
Miniaturized Q‐band ×8 frequency multiplier with optimized efficiency in 65‐nm CMOS technology Open
In this work, a miniaturized Q‐band ×8 frequency multiplier with a structure designed for optimized efficiency is demonstrated. The circuit is fabricated using 65‐nm CMOS technology and designed to operate from 46.4 to 50.4 GHz. The ×8 fre…