Jianjing Wang
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View article: Effect of Nb Content on Strength and Toughness of 25MnB Crawler Steel and Its Microstructural Characterization
Effect of Nb Content on Strength and Toughness of 25MnB Crawler Steel and Its Microstructural Characterization Open
To address the failure of 25MnB crawler track steel due to insufficient strength and toughness, this study designed a new type of 25MnB crawler track steel and investigated the effects of the Nb content on its mechanical properties, micros…
View article: Full Custom Design of an Arbitrary Waveform Gate Driver With 10-GHz Waypoint Rates for GaN FETs
Full Custom Design of an Arbitrary Waveform Gate Driver With 10-GHz Waypoint Rates for GaN FETs Open
Active gate driving of power devices seeks to shape switching trajectories via the gate, for example, to reduce EMI without degrading efficiency. To this end, driver ICs with integrated arbitrary waveform generators have been used to achie…
View article: Overtemperature Protection Circuit for GaN Devices Using a <i>di/dt</i> Sensor
Overtemperature Protection Circuit for GaN Devices Using a <i>di/dt</i> Sensor Open
Power semiconductor devices have maximum junction temperature limits, but it is not straightforward to sense or infer temperature inside sealed devices in running converters. One method is to observe electrical behavior that is known to be…
View article: Effect of Quenching Temperature on Microstructure and Mechanical Properties of Q1030 Steel
Effect of Quenching Temperature on Microstructure and Mechanical Properties of Q1030 Steel Open
In this paper, the law of austenitic grain growth gfg is studied under different heating temperature and insulation time, the suitable grain growth model is established, and the regression calculation method is introduced to verify the cor…
View article: Effect of Heating Temperature on the Grain Size and Titanium Solid-Solution of Titanium Microalloyed Steels
Effect of Heating Temperature on the Grain Size and Titanium Solid-Solution of Titanium Microalloyed Steels Open
Through studying on the heating process of titanium microalloyed steels, the influence of heating temperature on the austenite grain size and the solid dissolution, precipitation law of Ti microalloying element were analyzed, and the resul…
View article: Infinity Sensor: Temperature Sensing in GaN Power Devices using Peak di/dt
Infinity Sensor: Temperature Sensing in GaN Power Devices using Peak di/dt Open
Di/dt has previously been proposed as a temperature indicator for Si and SiC devices, however, the evaluation of its viability for GaN devices is challenging as known current sensors introduce significant unwanted parasitic inductance. Thi…
View article: Design Method for the Coil-System and the Soft Switching Technology for High-Frequency and High-Efficiency Wireless Power Transfer Systems
Design Method for the Coil-System and the Soft Switching Technology for High-Frequency and High-Efficiency Wireless Power Transfer Systems Open
Increasing the resonant frequency of a wireless power transfer (WPT) system effectively improves the power transfer efficiency between the transmit and the receive coils but significantly limits the power transfer capacity with the same co…
View article: Crosstalk suppression in a 650-V GaN FET bridgeleg converter using 6.7-GHz active gate driver
Crosstalk suppression in a 650-V GaN FET bridgeleg converter using 6.7-GHz active gate driver Open
With switching transients as fast as 100 V/ns and a low threshold voltage of 1-2 V, GaN FETs in bridge-leg topologies are potentially vulnerable to crosstalk and the resultant unwanted partial turn-on, noise interference, and increased los…
View article: Multi-level active gate driver for SiC MOSFETs
Multi-level active gate driver for SiC MOSFETs Open
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expec…
View article: A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI
A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI Open
Active gate driving has been demonstrated to beneficially shape switching waveforms in Si- and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far…
View article: Shaping switching waveforms in a 650 V GaN FET bridge-leg using 6.7 GHz active gate drivers
Shaping switching waveforms in a 650 V GaN FET bridge-leg using 6.7 GHz active gate drivers Open
The application of active gate driving to 40 V GaN FETs has previously been shown to reduce ringing and EMI-generating spectral content in the switch-node voltage waveforms. This paper, for the first time, shows active gate driving applied…