Jianlu Wang
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View article: Nano‐Scale Phonon Dynamics in GaN: Fundamentals and Strategies for Thermal Transport Modulation
Nano‐Scale Phonon Dynamics in GaN: Fundamentals and Strategies for Thermal Transport Modulation Open
With the rapid advancement of electronic technologies, the effective thermal management in gallium nitride (GaN) ‐based devices has emerged as a critical challenge, particularly as device dimensions shrink to scales comparable to phonon me…
View article: Bilateral Geiger mode avalanche in InSe Schottky photodiodes
Bilateral Geiger mode avalanche in InSe Schottky photodiodes Open
View article: High Precision Conductance Modulation in CuCrP<sub>2</sub>S<sub>6</sub> Synaptic Devices for Enhanced Neuromorphic Computing
High Precision Conductance Modulation in CuCrP<sub>2</sub>S<sub>6</sub> Synaptic Devices for Enhanced Neuromorphic Computing Open
Artificial synapses are essential components for realizing neuromorphic computing at the physical level. Although numerous artificial synaptic devices have been fabricated in recent years, their performance is often limited by their resist…
View article: Bilateral Geiger mode avalanche in InSe Schottky photodiodes
Bilateral Geiger mode avalanche in InSe Schottky photodiodes Open
Avalanche photodiodes (APDs) are crucial in emerging weak light signal detection fields. The major challenge of high-performance APDs is to achieve both an ultrahigh gain and ultralow breakdown voltage. The key to efficient carrier multipl…
View article: High responsivity and detectivity β-Ga2O3 solar-blind photodetectors optimized by oxygen vacancy engineering
High responsivity and detectivity β-Ga2O3 solar-blind photodetectors optimized by oxygen vacancy engineering Open
View article: Multi-dimensional optical information acquisition based on a misaligned unipolar barrier photodetector
Multi-dimensional optical information acquisition based on a misaligned unipolar barrier photodetector Open
Acquiring multi-dimensional optical information, such as intensity, spectrum, polarization, and phase, can significantly enhance the performance of photodetectors. Incorporating these dimensions allows for improved image contrast, enhanced…
View article: 2D materials-based photodetectors combined with ferroelectrics
2D materials-based photodetectors combined with ferroelectrics Open
Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current ‘…
View article: The Development, Applications, and Image Processing Techniques of Polarization Imaging Systems
The Development, Applications, and Image Processing Techniques of Polarization Imaging Systems Open
View article: The Development, Applications, and Image Processing Techniques of Polarization Imaging Systems
The Development, Applications, and Image Processing Techniques of Polarization Imaging Systems Open
View article: High Responsivity and Detectivity Β-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetectors Optimized by Oxygen Vacancy Engineering
High Responsivity and Detectivity Β-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetectors Optimized by Oxygen Vacancy Engineering Open
View article: Dual-band polarized photodetector based on van der Waals heterojunction
Dual-band polarized photodetector based on van der Waals heterojunction Open
The acquisition of multi-dimensional optical information, including light intensity, spectrum, polarization, and phase, is a crucial aspect in the advancement of next-generation infrared photodetectors. However, the acquisition of multi-di…
View article: Controllable Photocurrent Generation in Lateral Bilayer MoS<sub>2</sub>–WS<sub>2</sub> Heterostructure
Controllable Photocurrent Generation in Lateral Bilayer MoS<sub>2</sub>–WS<sub>2</sub> Heterostructure Open
Laterally epitaxial two‐dimensional (2D) transition metal dichalcogenides (TMDs) heterojunctions are of considerable interest in recent years due to atomically sharp interfaces and tunable band alignment, which have potential applications …
View article: Ferroelectric field effect transistors for electronics and optoelectronics
Ferroelectric field effect transistors for electronics and optoelectronics Open
Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect tr…
View article: Anomalous Polarization-Switching Phenomena and Noteworthy Pyroelectricity in Ferroelectric Hf0.5zr0.5o2 Polycrystalline Films
Anomalous Polarization-Switching Phenomena and Noteworthy Pyroelectricity in Ferroelectric Hf0.5zr0.5o2 Polycrystalline Films Open
View article: Ordered phase transformation and Cu doping effects in room-temperature ferromagnetic Sr3YCo4O10.5+δ
Ordered phase transformation and Cu doping effects in room-temperature ferromagnetic Sr3YCo4O10.5+δ Open
Sr 3 YCo 4 O 10.5+ δ (314-SYCO), with an unusual ordered structure and a high Curie temperature ( T c ≈ 335 K), is attracting increasing attention. Herein, to improve the electrical performance of 314-SYCO, Cu-doped Sr 3 YCo 4− x Cu x O 10…
View article: Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains
Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains Open
With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive potential applications. However…
View article: HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector
HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector Open
New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-perform…
View article: Ultralow‐Power Machine Vision with Self‐Powered Sensor Reservoir (Adv. Sci. 15/2022)
Ultralow‐Power Machine Vision with Self‐Powered Sensor Reservoir (Adv. Sci. 15/2022) Open
Ultralow‐Power Machine Vision In article number 2106092, Bobo Tian, Hui Peng, Chungang Duan, and co‐workers demonstrate that photovoltaic sensors can be used for in‐sensor reservoir computing (RC). Brain‐inspired vision is achieved by in‐s…
View article: High-performance ReS<sub>2</sub> photodetectors enhanced by a ferroelectric field and strain field
High-performance ReS<sub>2</sub> photodetectors enhanced by a ferroelectric field and strain field Open
The flexible ReS 2 /P(VDF-TrFE) hybrid photodetector could be enhanced by a ferroelectric field and strain field.
View article: Ferroelectric-tuned van der Waals heterojunction with band alignment evolution
Ferroelectric-tuned van der Waals heterojunction with band alignment evolution Open
View article: Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors
Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors Open
Photodetectors built from conventional bulk materials such as silicon, III–V or II–VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in…
View article: Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition
Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition Open
Low-dimensional Te-based photodetectors exhibit blackbody response and achieve record-set performance metrics.
View article: Exciton emissions of bilayer WSe2 tuned by the ferroelectric P (VDF-TrFE) polymer.
Exciton emissions of bilayer WSe2 tuned by the ferroelectric P (VDF-TrFE) polymer. Open
In this work, we show electrical polarization of ferroelectric P (VDF-TrFE) polymer can be used to engineer the photoluminescence (PL) at bilayer WSe2. The total PL intensity substantially is suppressed under negative polarization and enha…
View article: Exciton emissions in bilayer WSe2 tuned by the ferroelectric polymer
Exciton emissions in bilayer WSe2 tuned by the ferroelectric polymer Open
In this work, a hybrid integration of few-layer transition metal dichalcogenides (TMDCs) and ferroelectric polymer is designed to achieve passive control of optical properties in-situ. The electrical polarization in ferroelectric P(VDF-TrF…
View article: Ferroelectric-tuned van der Waals heterojunction with band alignment evolution
Ferroelectric-tuned van der Waals heterojunction with band alignment evolution Open
Van der Waals (vdW) integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. However, band alignment in a specific vdW heterojunction (VHJ) is difficult to tune, restricting its multifun…
View article: Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe
Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe Open
View article: Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis
Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis Open
The polarization switching kinetics of nanosized ferroelectric crystals and the transition between homogeneous and domain switching in nanoscale ferroelectric films are considered. Homogeneous switching according to the Ginzburg-Landau-Dev…
View article: A versatile photodetector assisted by photovoltaic and bolometric effects
A versatile photodetector assisted by photovoltaic and bolometric effects Open
The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic properties makes it difficult for de…
View article: High-performance β-Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector
High-performance β-Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector Open
Gallium oxide (Ga 2 O 3 ) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga 2 O 3 films by pulsed laser deposition. β-Ga 2 O 3 films of different thickness…
View article: Ultrasensitive negative capacitance phototransistors
Ultrasensitive negative capacitance phototransistors Open
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS 2 ) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrase…