Jihong Yim
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View article: Atomic layer deposited zinc promoted copper catalysts for carbon dioxide hydrogenation to methanol: Influence of support
Atomic layer deposited zinc promoted copper catalysts for carbon dioxide hydrogenation to methanol: Influence of support Open
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View article: Simulated conformality of atomic layer deposition in lateral channels: the impact of the Knudsen number on the saturation profile characteristics
Simulated conformality of atomic layer deposition in lateral channels: the impact of the Knudsen number on the saturation profile characteristics Open
Atomic layer deposition (ALD) is exceptionally suitable for coating complex three-dimensional structures with conformal thin films. Studies of ALD conformality in high-aspect-ratio (HAR) features typically assume free molecular flow condit…
View article: Simulated conformality of atomic layer deposition in lateral channels: the impact of the Knudsen number on the saturation profile characteristics
Simulated conformality of atomic layer deposition in lateral channels: the impact of the Knudsen number on the saturation profile characteristics Open
Systematic analysis of saturation profile characteristics allowed development of an extended slope method that relates the slope of the adsorption front to the sticking coefficient for any Knudsen number.
View article: Atomic Layer Deposition of Zinc Oxide on Mesoporous Zirconia Using Zinc(II) Acetylacetonate and Air
Atomic Layer Deposition of Zinc Oxide on Mesoporous Zirconia Using Zinc(II) Acetylacetonate and Air Open
Liliana Krotz and Walter Galotta are thanked for carbon content analysis. Hannu Revitzer is thanked for ICP-OES measurements. Joakim Kattelus is thanked for the standard deviation of ICP-OES measurements. Zahra Ahaliabadeh and Ville Miikku…
View article: Atomic layer deposition of zinc oxide on mesoporous zirconia using zinc(II) acetylacetonate and air
Atomic layer deposition of zinc oxide on mesoporous zirconia using zinc(II) acetylacetonate and air Open
The self-terminating chemistry of atomic layer deposition (ALD) ideally enables the growth of homogeneously distributed materials on an atomic scale. This study investigates the ALD of zinc oxide (ZnO) on mesoporous zirconium oxide (ZrO2) …
View article: Simulation of Conformality of ALD Growth Inside Lateral Channels: Comparison Between a Diffusion-Reaction Model and a Ballistic Transport-Reaction Model
Simulation of Conformality of ALD Growth Inside Lateral Channels: Comparison Between a Diffusion-Reaction Model and a Ballistic Transport-Reaction Model Open
Atomic layer deposition (ALD) has found significant use in the coating of high-aspect-ratio (HAR) structures. Approaches to model ALD film conformality in HAR structures can generally be classified into diffusion-reaction (DR) models, ball…
View article: Atomic layer deposition of zinc oxide on mesoporous zirconia using zinc(II) acetylacetonate and air
Atomic layer deposition of zinc oxide on mesoporous zirconia using zinc(II) acetylacetonate and air Open
The self-terminating chemistry of atomic layer deposition (ALD) ideally enables the growth of homogeneously distributed materials on an atomic scale. This study investigates the ALD of zinc oxide (ZnO) on mesoporous zirconium oxide (ZrO2) …
View article: Simulation of Conformality of ALD Growth Inside Lateral Channels: Comparison Between a Diffusion-Reaction Model and a Ballistic Transport-Reaction Model
Simulation of Conformality of ALD Growth Inside Lateral Channels: Comparison Between a Diffusion-Reaction Model and a Ballistic Transport-Reaction Model Open
Atomic layer deposition (ALD) has found significant use in the coating of high-aspect-ratio (HAR) structures. Approaches to model ALD film conformality in HAR structures can generally be classified into diffusion-reaction (DR) models, ball…
View article: Atomic layer deposition of zinc oxide on mesoporous zirconia using zinc(II) acetylacetonate and air
Atomic layer deposition of zinc oxide on mesoporous zirconia using zinc(II) acetylacetonate and air Open
The self-terminating chemistry of atomic layer deposition (ALD) ideally enables the growth of homogeneously distributed materials on an atomic scale. This study investigates the ALD of zinc oxide (ZnO) on mesoporous zirconium oxide (ZrO2) …
View article: Simulated thickness profiles of ALD film in a wide microchannel of 500 nm height published as Fig.4 in PCCP 24 (2022) 8645-8660
Simulated thickness profiles of ALD film in a wide microchannel of 500 nm height published as Fig.4 in PCCP 24 (2022) 8645-8660 Open
A series of simulated thickness profiles of atomic layer deposition (ALD) film grown in a wide lateral high-aspect-ratio (LHAR) microchannel is archived as an Excel file. This dataset has been published as Figure 4 in the publication "Conf…
View article: Simulated thickness profiles of ALD film in a wide microchannel of 500 nm height published as Fig.4 in PCCP 24 (2022) 8645-8660
Simulated thickness profiles of ALD film in a wide microchannel of 500 nm height published as Fig.4 in PCCP 24 (2022) 8645-8660 Open
A series of simulated thickness profiles of atomic layer deposition (ALD) film grown in a wide lateral high-aspect-ratio (LHAR) microchannel is archived as an Excel file. This dataset has been published as Figure 4 in the publication "Conf…
View article: Simulation of conformality of ALD growth inside lateral channels: comparison between a diffusion–reaction model and a ballistic transport–reaction model
Simulation of conformality of ALD growth inside lateral channels: comparison between a diffusion–reaction model and a ballistic transport–reaction model Open
Comparison of saturation profiles generated by a diffusion–reaction model and a ballistic transport–reaction model reveals similar qualitative trends and quantitative differences.
View article: Effect of atomic layer deposited zinc promoter on the activity of copper-on-zirconia catalysts in the hydrogenation of carbon dioxide to methanol
Effect of atomic layer deposited zinc promoter on the activity of copper-on-zirconia catalysts in the hydrogenation of carbon dioxide to methanol Open
The development of active catalysts for carbon dioxide (CO2) hydrogenation to methanol is intimately related to the creation of effective metal-oxide interfaces. In this work, we investigated how the order of addition of copper and zinc on…
View article: Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile
Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile Open
Unparalleled conformality is driving ever new applications for atomic layer deposition (ALD), a thin film growth method based on repeated self-terminating gas-solid reactions. In this work, we re-implemented a diffusion-reaction model from…
View article: Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile
Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile Open
Unparalleled conformality is driving ever new applications for atomic layer deposition (ALD), a thin film growth method based on repeated self-terminating gas-solid reactions. In this work, we re-implemented a diffusion-reaction model from…
View article: Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile
Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile Open
We simulated thickness profiles of atomic layer deposited thin films by a diffusion–reaction model in two flow regimes. The thickness profiles were affected by process parameters such as density of film, sticking coefficient, and growth pe…
View article: Modelling atomic layer deposition overcoating formation on a porous heterogeneous catalyst
Modelling atomic layer deposition overcoating formation on a porous heterogeneous catalyst Open
Atomic layer deposition (ALD) was used to deposit a protective overcoating (Al 2 O 3 ) on an industrially relevant Co-based Fischer–Tropsch catalyst.
View article: Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile
Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile Open
Unparalleled conformality is driving ever new applications for atomic layer deposition (ALD), a thin film growth method based on repeated self-terminating gas-solid reactions. In this work, we re-implemented a diffusion-reaction model from…
View article: Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile
Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile Open
Unparalleled conformality is driving ever new applications for atomic layer deposition (ALD), a thin film growth method based on repeated self-terminating gas-solid reactions. In this work, we re-implemented a diffusion-reaction model from…
View article: Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure
Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure Open
Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and pr…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels
Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels Open
Thin films by atomic layer deposition (ALD) raise global interest through unparalleled conformality. Saturation profiles of the archetypical trimethylaluminum-water ALD process in narrow rectangular channels create a benchmark for future s…