Jicai Zhang
YOU?
Author Swipe
View article: Modeling the Internal and Contextual Attention for Self-Supervised Skeleton-Based Action Recognition
Modeling the Internal and Contextual Attention for Self-Supervised Skeleton-Based Action Recognition Open
Multimodal contrastive learning has achieved significant performance advantages in self-supervised skeleton-based action recognition. Previous methods are limited by modality imbalance, which reduces alignment accuracy and makes it difficu…
View article: Track-to-track association from diverse source ship trajectory based on an improved graph neural network
Track-to-track association from diverse source ship trajectory based on an improved graph neural network Open
View article: Multicenter Application and Evaluation of Automated Quality Control Systems on Fully Automated Assembly Lines
Multicenter Application and Evaluation of Automated Quality Control Systems on Fully Automated Assembly Lines Open
View article: All-optical manipulation of bandgap dynamics via coherent phonons
All-optical manipulation of bandgap dynamics via coherent phonons Open
The ability to actively and dynamically control electronic states at ultrafast timescales opens up a wide range of potential applications across optoelectronics, quantum computing and sensing, energy conversion and storage, etc. Yet, achie…
View article: All-Optical Manipulation of Band Gap Dynamics via Electron-Phonon Coupling
All-Optical Manipulation of Band Gap Dynamics via Electron-Phonon Coupling Open
The electron-phonon coupling (EPC) is a ubiquitous interaction in condensed systems and plays a vital role in shaping the electronic properties of materials. Yet, achieving coherent manipulation of electron-phonon coupling has posed a cons…
View article: High Harmonic Spectroscopy Probes Lattice Dynamics
High Harmonic Spectroscopy Probes Lattice Dynamics Open
The probing of coherent lattice vibrations in solids has been conventionally carried out using time-resolved transient spectroscopy where only the relative oscillation amplitude can be obtained. Using time-resolved X-ray techniques, absolu…
View article: Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy
Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy Open
AlN epilayers were grown on magnetron-sputtered (MS) (11–22) AlN buffers on m-plane sapphire substrates at 1450 °C via hydride vapour phase epitaxy (HVPE). The MS buffers were annealed at high temperatures of 1400–1600 °C. All the samples …
View article: Fabrication of a freestanding AlN substrate via HVPE homoepitaxy on a PVT-AlN substrate
Fabrication of a freestanding AlN substrate via HVPE homoepitaxy on a PVT-AlN substrate Open
Hydride vapor phase epitaxy (HVPE) is employed for the homoepitaxial development of AlN thick films on AlN substrates grown via physical vapor transport (PVT). A freestanding AlN substrate with a 200 μ m thickness is then obtained by mecha…
View article: Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature
Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature Open
High-quality AlN film is a key factor affecting the performance of deep-ultraviolet optoelectronic devices. In this work, high-temperature annealing technology in a nitrogen atmosphere was used to improve the quality of AlN films with diff…
View article: Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE
Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE Open
We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffe…
View article: Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE
Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE Open
Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is …
View article: Spectroscopic properties and analytical potential energy function of ground and low-lying excited states of BeC moleule
Spectroscopic properties and analytical potential energy function of ground and low-lying excited states of BeC moleule Open
Diatomic molecule BeC has a complex electronic structure with a large number of low-lying excited states that are all strongly bound electronic states. Thus, the BeC molecule has the abundant spectral information. In this work, the potenti…
View article: Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes Open
The influence of quantum-well (QW) number on electroluminescence properties was investigated and compared with that of AlN electron blocking layer (EBL) for deep ultraviolet light-emitting diodes (DUV-LEDs). By increasing the QW number, th…
View article: Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures Open
View article: Gallium Nitride Microrods Grown on Graphene/SiO2 Substrate
Gallium Nitride Microrods Grown on Graphene/SiO2 Substrate Open
View article: Nucleation and growth of (1011) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
Nucleation and growth of (1011) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy Open
Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields ar…
View article: Liquid Phase Growth of the Graphene using GaxNi1-x System as Catalys
Liquid Phase Growth of the Graphene using GaxNi1-x System as Catalys Open
Deposition of few-layer graphene films on dielectric substrate by using a novel GaxNi1-x flux LPG (Liquid Phase Growth) method is demonstrated.The graphene films shape themselves as circular thin films.The influence of the ingredients in t…