Jinwoo Hwang
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View article: Structural and electrical characterization of short-wave infrared GeSn diodes [Invited]
Structural and electrical characterization of short-wave infrared GeSn diodes [Invited] Open
Group-IV (Si)GeSn alloys are rapidly emerging as promising candidates for monolithically integrated infrared (IR) photonic devices, offering tunable direct band gaps and full compatibility with CMOS technology. Ge 0.91 Sn 0.09 enables stro…
View article: Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes
Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes Open
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temper…
View article: Neuroimaging spectrum of myelin oligodendrocyte glycoprotein antibody-associated disease with brain involvement: description of various cerebral syndromes
Neuroimaging spectrum of myelin oligodendrocyte glycoprotein antibody-associated disease with brain involvement: description of various cerebral syndromes Open
Background Myelin oligodendrocyte glycoprotein antibody-associated disease (MOGAD) is a notable cause of acquired central nervous system inflammatory disorders in children. Objective This study aimed to characterize the neuroimaging spectr…
View article: Emergent Ferromagnetism at LaFeO<sub>3</sub>/SrTiO<sub>3</sub> Interface Arising from a Strain‐Induced Spin‐State Transition
Emergent Ferromagnetism at LaFeO<sub>3</sub>/SrTiO<sub>3</sub> Interface Arising from a Strain‐Induced Spin‐State Transition Open
Creating new interfacial magnetic states with desired functionalities is attractive for fundamental studies and spintronics applications. The emergence of interfacial magnetic phases demands the fabrication of pristine interfaces and the c…
View article: Electrical and structural characterization of <i>in situ</i> MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs
Electrical and structural characterization of <i>in situ</i> MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs Open
This study investigates the electrical and structural properties of metal–oxide–semiconductor capacitors (MOSCAPs) with in situ metal-organic chemical vapor deposition-grown Al2O3 dielectrics deposited at varying temperatures on (010) β-Ga…
View article: Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon
Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon Open
We report ferroelectric switching at room temperature in sub-100 nm aluminum nitride thin films deposited using radio frequency magnetron sputtering in a metal–insulator–metal configuration. The film microstructures were investigated using…
View article: The function of emotional intelligence in conflict resolution among adolescents
The function of emotional intelligence in conflict resolution among adolescents Open
The research examines the role of emotional intelligence in the resolution of conflicts among the adolescents. The study focuses of key aspects of emotional intelligence including emotional awareness, communication, empathy, and self-regul…
View article: Cross-cultural communication in global teams: Challenges and effective strategies collaboration in multinational corporations
Cross-cultural communication in global teams: Challenges and effective strategies collaboration in multinational corporations Open
The research aims at investigating the communication challenges that members of global team’s face in the course of their collaboration to offset tasks. The business landscape is becoming increasingly globalized with members of various tea…
View article: Corporate accountability in human rights: Bridging the legal gaps
Corporate accountability in human rights: Bridging the legal gaps Open
Foreign investors’ corporate role in human rights has been on the limelight due to the rising dominance of MNCs in the world economy. This paper presents the lack of oversight mechanisms within the current international bodies of law which…
View article: Retrospective Clinical Trial to Evaluate the Effectiveness of a New Tanner–Whitehouse-Based Bone Age Assessment Algorithm Trained with a Deep Neural Network System
Retrospective Clinical Trial to Evaluate the Effectiveness of a New Tanner–Whitehouse-Based Bone Age Assessment Algorithm Trained with a Deep Neural Network System Open
Background/Objectives: To develop an automated deep learning-based bone age prediction model using the Tanner–Whitehouse (TW3) method and evaluate its feasibility by comparing its performance with that of pediatric radiologists. Methods: T…
View article: Emergent Ferromagnetism at LaFeO3/SrTiO3 Interface Arising from a Strain-induced Spin-State Transition
Emergent Ferromagnetism at LaFeO3/SrTiO3 Interface Arising from a Strain-induced Spin-State Transition Open
EELS. STEM image. DFT. Magnetism
View article: Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire Open
MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive x-ray spectroscopy was used to estimate the cation composition ratios. To mitigate m…
View article: Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films Open
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
View article: Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes
Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes Open
Ultrawide bandgap (UWBG) semiconductor β-phase Ga2O3 has attracted significant interest for potential power electronics applications. This, however, is hindered by the lack of effective p-type dopants in β-Ga2O3. A p–n heterojunction utili…
View article: Ultra-high permittivity BaTiO3 (<i>ε</i> = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications
Ultra-high permittivity BaTiO3 (<i>ε</i> = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications Open
We report ultra-high permittivity of RF sputtered BaTiO3 films on AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors (MISHEMTs) via high temperature sputtering and subsequent annealing in nitrogen. We developed a no…
View article: Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes
Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes Open
This study investigates the long-term stability of Pt/β-Ga2O3 field-plated Schottky barrier diodes at high temperatures, with extended thermal cycling and soaking stress. The device characteristics reveal a strong dependence on operating t…
View article: Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire Open
MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate m…
View article: Metal-organic chemical vapor deposition of MgSiN$_{2}$ thin films
Metal-organic chemical vapor deposition of MgSiN$_{2}$ thin films Open
Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them, MgSiN$_{…
View article: In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching
In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching Open
We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n + GaN ohmic contacts using a selective etching process that is more suitable for device scaling. The regrown ohmic contacts have a clean and …
View article: Oxidation-resistant and highly sensitive cellulose paper pressure sensor for wearable electronics
Oxidation-resistant and highly sensitive cellulose paper pressure sensor for wearable electronics Open
Nonbiodegradable polymers widely used in wearable electronics and sensors contribute significantly to e-waste and environmental toxicity. While the integration of biodegradable biopolymers offers a promising solution, their application is …
View article: Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs
Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs Open
This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$β$-Ga$_2$O$_3$ MOSCAPs showed…
View article: The intersection of business and artificial intelligence in healthcare: Opportunities and ethical challenges
The intersection of business and artificial intelligence in healthcare: Opportunities and ethical challenges Open
This dissertation seeks to examine the connection between business and artificial intelligence (AI) in the health sector, major possibilities, and the current ethical issues. It is evident that adoption of AI has revolutionized healthcare …
View article: Nano-silicon/reduced graphene oxide composite anodes for high performance all solid-state batteries
Nano-silicon/reduced graphene oxide composite anodes for high performance all solid-state batteries Open
Nano-Si (n-Si) encapsulated with SiO x shells and chemically anchored onto reduced graphene oxide (rGO) via hydrothermal self-assembly is demonstrated as a promising anode for all solid-state batteries using argyrodite solid electrolyte (S…
View article: Ethical leadership in the corporate world
Ethical leadership in the corporate world Open
This dissertation delves into the critical role of ethical leadership in the corporate world, focusing on its impact on corporate reputation, employee morale, and productivity. The study employs a mixed-methodology approach, integrating qu…