Jiaming Sun
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View article: Narrow UVB-Emitted YBO3 Phosphor Activated by Bi3+ and Gd3+ Co-Doping
Narrow UVB-Emitted YBO3 Phosphor Activated by Bi3+ and Gd3+ Co-Doping Open
Y0.9(GdxBi1−x)0.1BO3 phosphors (x = 0, 0.2, 0.4, 0.6, 0.8, and 1.0, YGB) were obtained via high-temperature solid-state synthesis. Differentiated phases and micro-morphologies were determined by adjusting the synthesis temperature and the …
View article: Enhancement of the Electroluminescence from Amorphous Er-Doped Al2O3 Nanolaminate Films by Y2O3 Cladding Layers Using Atomic Layer Deposition
Enhancement of the Electroluminescence from Amorphous Er-Doped Al2O3 Nanolaminate Films by Y2O3 Cladding Layers Using Atomic Layer Deposition Open
Amorphous Al2O3-Y2O3:Er nanolaminate films are fabricated on silicon by atomic layer deposition, and ~1530 nm electroluminescence (EL) is obtained from the metal-oxide-semiconductor light-emitting devices based on these nanofilms. The intr…
View article: Electroluminescence from Er-Doped Geo2 Nanofilms Fabricated by Atomic Layer Deposition on Silicon: Effect of Annealing Temperature on Film Properties
Electroluminescence from Er-Doped Geo2 Nanofilms Fabricated by Atomic Layer Deposition on Silicon: Effect of Annealing Temperature on Film Properties Open
View article: Atomic Layer Deposition of Er-Doped Yttrium Aluminum Gallium Garnet Nanofilms with Tunable Crystallization Temperature and Electroluminescence Properties
Atomic Layer Deposition of Er-Doped Yttrium Aluminum Gallium Garnet Nanofilms with Tunable Crystallization Temperature and Electroluminescence Properties Open
View article: Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone
Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone Open
High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO2 films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as pr…
View article: Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon
Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon Open
Realization of a silicon-based light source is of significant importance for the future development of optoelectronics and telecommunications. Here, nanolaminate Al2O3/Tm2O3 films are fabricated on silicon utilizing atomic layer deposition…
View article: Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Deposition
Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Deposition Open
View article: Intense electroluminescence from Al<sub>2</sub>O<sub>3</sub>/Tb<sub>2</sub>O<sub>3</sub>nanolaminate films fabricated by atomic layer deposition on silicon
Intense electroluminescence from Al<sub>2</sub>O<sub>3</sub>/Tb<sub>2</sub>O<sub>3</sub>nanolaminate films fabricated by atomic layer deposition on silicon Open
Intense electroluminescence (EL) from Tb3+ ions in the Al2O3/Tb2O3 nanolaminate films is achieved in a metal-oxide-semiconductor structure fabricated on silicon, utilizing atomic layer…
View article: Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone
Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone Open