Jon Borgersen
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View article: Origin of enhanced conductivity in low dose ion irradiated oxides
Origin of enhanced conductivity in low dose ion irradiated oxides Open
Significant resistivity variations have previously been observed in oxides subjected to relatively low ion irradiation doses, nominally insufficient to generate the amount of bulk defects needed to explain the phenomena. In an effort to un…
View article: Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias
Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias Open
Discovering multifunctional materials is of paramount importance for advancing the science and technology. Herein, we report on an optical phenomenon modulated by an electrical process that happened at the metal–ZnO:Cu junction, for which …
View article: Fermi level controlled point defect balance in ion irradiated indium oxide
Fermi level controlled point defect balance in ion irradiated indium oxide Open
Fermi level controlled point defect balance is demonstrated in ion irradiated indium oxide (In2O3). Specifically, our observations can be sub-divided into the formation of isolated Frenkel pairs and secondary defects, correlated with an in…
View article: ZnSnN<sub>2</sub> in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap
ZnSnN<sub>2</sub> in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap Open
Semiconducting II‐IV nitrides exhibit tunability of optoelectronic properties similar to that of the group III nitrides, while comprising earth‐abundant and potentially low‐cost elements. However, the II‐IV nitrides synthesis is immature, …
View article: Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials
Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials Open
The evolution of electrical resistance as function of defect concentration is examined for the unipolarn-conducting oxides CdO,β-Ga2O3, In2O3, SnO2and ZnO in order to explore the predictions of the amphoteric defect model. Intrinsic defect…
View article: Area-selective atomic layer deposition of molybdenum oxide
Area-selective atomic layer deposition of molybdenum oxide Open
Area-selective bottom-up synthesis routes of thin films are required to overcome the current limits in lithography, and such growth can be achieved with high quality and nanometer thickness control by area-selective atomic layer deposition…