Jonas Lähnemann
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View article: Corrigendum to “Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD” [Acta Materialia 297 (2025) 121357]
Corrigendum to “Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD” [Acta Materialia 297 (2025) 121357] Open
View article: Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD Open
View article: Effect of lithium diffusion into Ga2O3 thin films
Effect of lithium diffusion into Ga2O3 thin films Open
View article: Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD Open
Correlations between dislocations in crystals reduce the elastic energy via screening of the strain by the surrounding dislocations. We study the correlations of threading dislocations in GaN epitaxial films with dislocation densities of 5…
View article: Growth of compositionally uniform In<sub>x</sub>Ga<sub>1−x</sub>N layers with low relaxation degree on GaN by molecular beam epitaxy
Growth of compositionally uniform In<sub>x</sub>Ga<sub>1−x</sub>N layers with low relaxation degree on GaN by molecular beam epitaxy Open
500 nm-thick layers with 0.06–0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass spectrometry, and …
View article: Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (Sn<i>x</i>Ge1−<i>x</i>)O2 during suboxide molecular beam epitaxy
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (Sn<i>x</i>Ge1−<i>x</i>)O2 during suboxide molecular beam epitaxy Open
Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. The (SnxG…
View article: Effect of Lithium Diffusion into Ga2o3 Thin Films
Effect of Lithium Diffusion into Ga2o3 Thin Films Open
View article: Nucleation and Faceting in (001) r-GeO2 Heteroepitaxy on r-TiO2 by Metalorganic Vapor Phase Epitaxy
Nucleation and Faceting in (001) r-GeO2 Heteroepitaxy on r-TiO2 by Metalorganic Vapor Phase Epitaxy Open
View article: Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy Open
Rutile GeO$_2$ is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO$_2$ enables bandgap engineering and the formation of heterostructure devices. The…
View article: Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy Open
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, seconda…
View article: Investigating the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence
Investigating the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence Open
This study examines the exciton dynamics in InGaN/GaN core–shell nanorods using time-resolved cathodoluminescence (TRCL), which provides nanometer-scale lateral spatial and tens of picoseconds temporal resolutions. The focus is on thick (>…
View article: Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy
Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy Open
Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area growth using a Si3N4 mask and molecular beam epitaxy. Systematic modulation of the emission along the nanowire axis is observed in spectrally resolved…
View article: Phase-selective growth of <i>κ</i>- vs <i>β</i>-Ga2O3 and (In<i>x</i>Ga1−<i>x</i>)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
Phase-selective growth of <i>κ</i>- vs <i>β</i>-Ga2O3 and (In<i>x</i>Ga1−<i>x</i>)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy Open
Its large intrinsic polarization makes the metastable κ-Ga2O3 polymorph appealing for multiple applications, and the In-incorporation into both κ and β-Ga2O3 allows us to engineer their bandgap on the low-end side. In this work, we provide…
View article: Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles Open
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon anneal…
View article: ScN/GaN(1100): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures
ScN/GaN(1100): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures Open
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN(11̅00) surface. To this end, ScN is grown on freestanding GaN(11̅00) substrates and self-assembled GaN nanowires exhibiting (11̅00) sidewalls. On both substrates, ScN cr…
View article: Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy Open
(In, Ga) alloy droplets are used to catalyse the growth of (In, Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental f…
View article: Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles Open
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon anneal…
View article: ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures Open
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls.…
View article: Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices
Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices Open
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gai…
View article: Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy Open
Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga$_2$O$_3$ an interesting material for multiple applications, while In-incorporation into any polymorphs of Ga$_2$O$_3$ allows to lower their bandg…
View article: Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy Open
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental flu…
View article: Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy
Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy Open
Accurate knowledge of optical constants (refractive index n and extinction coefficient k) of ScN is crucial for understanding optical properties of this binary nitride semiconductor as well as for its use in optoelectronic applications. Us…
View article: Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy Open
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness o…
View article: Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core–shell nanowires emitting in the green spectral range
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core–shell nanowires emitting in the green spectral range Open
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We pres…
View article: Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires Open
We study the molecular beam epitaxy of AlN nanowires between 950 °C and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al …
View article: Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy Open
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a supp…
View article: Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy Open
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness o…
View article: Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range Open
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We pres…
View article: Optical properties of ScN layers grown on Al$_{2}$O$_{3}$(0001) by plasma-assisted molecular beam epitaxy
Optical properties of ScN layers grown on Al$_{2}$O$_{3}$(0001) by plasma-assisted molecular beam epitaxy Open
An accurate knowledge of the optical constants (refractive index $n$ and extinction coefficient $k$) of ScN is crucial for understanding the optical properties of this binary nitride semiconductor as well as for its use in optoelectronic a…
View article: Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires Open
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$…