Jonathan A. J. Rupp
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View article: Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds
Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds Open
This contains X-ray absorption and diffraction data collected at the Swiss Light Source for various vanadium/chromium oxide samples. Supplement to our paper titled: "K-edge XANES characterization of ultra-thin (V1-xCrx)2O3 films and binary…
View article: Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds
Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds Open
This contains X-ray absorption and diffraction data collected at the Swiss Light Source for various vanadium/chromium oxide samples. Supplement to our paper titled: "K-edge XANES characterization of ultra-thin (V1-xCrx)2O3 films and binary…
View article: Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics Open
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are p…
View article: Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics Open
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are p…
View article: Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers
Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers Open
View article: Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode
Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode Open
View article: Synthese und resistive Schaltmechanismen von Mott-Isolatoren basierend auf undotieren und Cr-dotierten Vanadiumoxid Dünnschichten als Funktion der Nanostruktur und der Materialeigenschaften
Synthese und resistive Schaltmechanismen von Mott-Isolatoren basierend auf undotieren und Cr-dotierten Vanadiumoxid Dünnschichten als Funktion der Nanostruktur und der Materialeigenschaften Open
The rapid evolution of electronics and their performance progress in the past decades call for extremely fast, scalable and power efficient memory technologies at the lowest cost. The dominating contemporary memory types of information tec…
View article: Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films
Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films Open
This study investigates resistive switching in amorphous undoped and Cr-doped vanadium oxide thin films synthesized by sputtering deposition at low oxygen partial pressure. Two different volatile threshold switching characteristics can occ…