Jonathan Bradford
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View article: Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite
Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite Open
Van der Waals (vdW) materials, such as hexagonal boron nitride (h-BN), are highly promising for applications in optoelectronics and quantum technologies. When assembled into heterostructures, h-BN can form moiré superlattices, enabling the…
View article: Inter- and Intramolecular On-Surface Synthesis of Porphyrin-Based Nanostructures on Au(111) and Cu(111)
Inter- and Intramolecular On-Surface Synthesis of Porphyrin-Based Nanostructures on Au(111) and Cu(111) Open
Surface-confined synthesis provides alternative reaction pathways to those utilized within solution-phase chemistry and offers a route to extended molecular architectures with nanoscale dimensions and fascinating magnetic, electronic, and …
View article: Optically detected magnetic resonance of wafer-scale hexagonal boron nitride thin films
Optically detected magnetic resonance of wafer-scale hexagonal boron nitride thin films Open
Hexagonal boron nitride (hBN) has recently been shown to host native defects exhibiting optically detected magnetic resonance (ODMR) with applications in nanoscale magnetic sensing and imaging. To advance these applications, deposition met…
View article: Experimental Demonstration of a Spectral Fingerprint for the Saddle and Inverted Conformations of Porphyrins on Copper
Experimental Demonstration of a Spectral Fingerprint for the Saddle and Inverted Conformations of Porphyrins on Copper Open
Combined density functional theory (DFT) and X-ray standing wave (XSW) studies have previously provided evidence for the preferential adoption of an inverted conformation of 2H-TPP on Cu(111) in contrast to the saddle conformation usually …
View article: Molecular beam epitaxy of boron arsenide layers
Molecular beam epitaxy of boron arsenide layers Open
Thermal management is the main technological challenge for next generation electronic devices. Recently, several groups successfully demonstrated boron arsenide (BAs) microcrystals with an ultrahigh thermal conductivity approaching that of…
View article: Defect-induced doping and chemisorption of O<sub>2</sub> in Se deficient GaSe monolayers
Defect-induced doping and chemisorption of O<sub>2</sub> in Se deficient GaSe monolayers Open
Owing to their atomically thin nature, structural defects in two-dimensional materials often play a dominating role in their electronic and optical properties. Here, we grow epitaxial GaSe monolayers on graphene/SiC by molecular beam epita…
View article: Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing
Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing Open
2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well…
View article: Spatially-resolved UV-C emission in epitaxial monolayer boron nitride
Spatially-resolved UV-C emission in epitaxial monolayer boron nitride Open
We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photo…
View article: Wafer‐Scale Two‐Dimensional Semiconductors for Deep UV Sensing
Wafer‐Scale Two‐Dimensional Semiconductors for Deep UV Sensing Open
2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, bu…
View article: Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy
Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy Open
Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic sta…
View article: Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode
Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode Open
Monolayers of free base phthalocyanine (H2Pc) are grown on monolayer and few-layer exfoliated flakes of hexagonal boron nitride (hBN) which are subsequently integrated into a van der Waals tunnel diode. This heterostructure consists of two…
View article: High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum
High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum Open
Epitaxial graphene on SiC is the most promising substrate for the next generation 2D electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the door to the use of all technological processes developed …
View article: Hydrogen‐Induced Conversion of SnS<sub>2</sub> into SnS or Sn: A Route to Create SnS<sub>2</sub>/SnS Heterostructures
Hydrogen‐Induced Conversion of SnS<sub>2</sub> into SnS or Sn: A Route to Create SnS<sub>2</sub>/SnS Heterostructures Open
The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge‐gap…
View article: Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures
Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures Open
Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit …
View article: MoS <sub>2</sub> /Epitaxial graphene layered electrodes for solid-state supercapacitors
MoS <sub>2</sub> /Epitaxial graphene layered electrodes for solid-state supercapacitors Open
The potential of transition metal dichalcogenides such as MoS 2 for energy storage has been significantly limited so far by the lack of conductivity and structural stability. Employing highly conductive, graphitic materials in combination …
View article: Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy
Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy Open
Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the …
View article: Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnO<sub><i>x</i></sub> films for Enhancing the Performance of Perovskite Solar Cells
Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnO<sub><i>x</i></sub> films for Enhancing the Performance of Perovskite Solar Cells Open
Invited for this month's cover is group of Tuquabo Tesfamichael at Queensland Univeristy of Technology. The image shows SnOx thin film deposited by sputtering with oxygen vacancies to be used as electron transporting layer in perovskite so…
View article: Front Cover: Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnO<sub><i>x</i></sub> films for Enhancing the Performance of Perovskite Solar Cells (ChemSusChem 18/2018)
Front Cover: Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnO<sub><i>x</i></sub> films for Enhancing the Performance of Perovskite Solar Cells (ChemSusChem 18/2018) Open
The Font Cover shows a SnOx thin film deposited through sputtering with oxygen vacancies to be used as electron transporting layer (ETL) in perovskite solar cells (PSCs). The role of oxygen vacancies was found to be crucial for engineering…
View article: Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnO<sub><i>x</i></sub> films for Enhancing the Performance of Perovskite Solar Cells
Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnO<sub><i>x</i></sub> films for Enhancing the Performance of Perovskite Solar Cells Open
This work demonstrates the effect of oxygen vacancies in SnO x thin films on the performance of perovskite solar cells. Various SnO x films with different amounts of oxygen vacancies were deposited by sputtering at different substrate temp…
View article: Tuning of oxygen vacancy in sputter-deposited SnOx films for enhancing the performance of perovskite solar cells
Tuning of oxygen vacancy in sputter-deposited SnOx films for enhancing the performance of perovskite solar cells Open
This work demonstrates the effect of oxygen vacancy of SnOx thin films on the performance of perovskite solar cells. Various SnOx films with different amount of oxygen vacancy were deposited by sputtering at different substrate temperature…