J. T. Olesberg
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View article: Interpolation of compound semiconductor alloy parameters from those of their constituents
Interpolation of compound semiconductor alloy parameters from those of their constituents Open
Several methods have been proposed for interpolation of the value of physical parameters of quaternary alloys from those of their constituent ternary and binary sub-alloys. These expressions agree when non-linear bowing terms are not requi…
View article: Substrate-Independent Technique of III-V Heterogeneous Integration of Focal Plane Arrays and Lasers
Substrate-Independent Technique of III-V Heterogeneous Integration of Focal Plane Arrays and Lasers Open
View article: Substrate-Independent Technique of III-V Heterogeneous Integration of Focal Plane Arrays and Lasers
Substrate-Independent Technique of III-V Heterogeneous Integration of Focal Plane Arrays and Lasers Open
We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.
View article: Extended-Short-Wavelength Infrared Detectors using Novel Quaternary III-V Alloys on InAs.
Extended-Short-Wavelength Infrared Detectors using Novel Quaternary III-V Alloys on InAs. Open
View article: Full-Resolution Two-Color Infrared Detector .
Full-Resolution Two-Color Infrared Detector . Open
View article: Extended SWIR InGaAs/GaAsSb type-II superlattice photodetector on InP.
Extended SWIR InGaAs/GaAsSb type-II superlattice photodetector on InP. Open
View article: Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs
Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs Open
We have fabricated and characterized AlInAsSb- and InPAsSb-absorber nBn infrared detectors with 200 K cutoff wavelengths from 2.55 to 3.25 μm. Minority-carrier lifetimes determined by microwave reflectance measurements were 0.2-1.0 μs in d…