Jongseo Park
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Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS Open
Hafnium oxide-based ferroelectrics, particularly zirconium-doped HfO2 (HZO), have demonstrated excellent compatibility with CMOS fabrication processes. However, the impact of post-metallization annealing (PMA)-a key step in optimizing devi…
Patterned Multi-Wall Nanosheet FETs for Sustainable Scaling: Zero Gate Extension With Minimal Gate Cut Width Open
In nanosheet field-effect transistors (NSFETs), the scaling of the cell height (CH) is constrained by strict design rules related to gate extension (GE), gate cut (GC), and device-to-device distance. In contrast, forksheet FETs (FSFETs) en…
FEOL Monolithic Co-Integration of FeFET and CMOS on 8-Inch Wafer Using Laser Spike Annealing With Implementation of an FeFET Inverter Open
Ferroelectric devices and monolithic three-dimensional integration technology (M3D) with good CMOS process compatibility have emerged as promising solutions to scaling issue at the device and system levels, respectively. In this study, we …
Changes in the Composition of the Dried Asian Lacquer (Korean Lacquer) Film Irradiated with Ultraviolet Light Open
Asian lacquer is a material that has been used in Asia from ancient times to coat the surface of objects. It is a durable material, but is known to be weak to ultraviolet light (UV). Here, to understand the deterioration characteristics of…
H2 Plasma and PMA Effects on PEALD-Al2O3 Films with Different O2 Plasma Exposure Times for CIS Passivation Layers Open
In this study, the electrical properties of Al2O3 film were analyzed and optimized to improve the properties of the passivation layer of CMOS image sensors (CISs). During Al2O3 deposition processing, the O2 plasma exposure time was adjuste…
Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application Open
We fabricated Al/Al2O3/SiO2/Si and Al/HfO2/Si structures to optimize the passivation layer of a backside-illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS), with the key properties of the newly developed hi…
A K-Means Clustering Algorithm to Determine Representative Operational Profiles of a Ship Using AIS Data Open
Defining the appropriate functional requirements in the early ship design stage is important in order that costs that are caused by the over- or under-specified functional capabilities do not increase. This paper presents a K-means cluster…
Analysis of Binding Media in Dancheong Sample from Unhangak Hall of Hwaryeongjeon Shrine, Suwon Open
ìì íë ¹ì ì´íê°ì ë¨ì²ê¸°ë² ì¡°ì¬ë¥¼ ìí´ ë¨ì²ìí¸ì ì 기물 ì±ë¶ì ë¶ìíìë¤. ë¶ì ëìì ì´íê° ë´í© 주ë³ì 주íê³¼ ê¸ ë¨ì²ìí¸ì´ë©°, IRê³¼ ì´ë¶í´/GC/MSë¶ìë²ì ì¬ì©íìë…
Extraction Characteristics of Dried Asian Lacquer by Solvents Before and After UV Degradation Open
ê±´ì¡°ì¹ ê¸° ì 물 ì¸ì² ì ì¬ì©ëë ë¤ìí ì©ë§¤ì ëìì¼ë¡ í´ë¦¬ë í¨ê³¼ë¥¼ ë¹êµí기 ìí´ ì¤íì ì§ííìë¤. ê±´ì¡°ì¹ ê³¼ ìì¸ì ì 24ì¼ ë ¸ì¶ìí¨ ê±´ì¡°ì¹ ì 물, ìíì¬, ìì¸í¤, í¥ì°ì …
Scientific Conservation Treatment of the Celadon Jar with the Inscription of ‘the Fourth Sunhwa Year’(National Treasure No.326) Open
ì²ì âìí4ë âëª íì리ë êµ½ë°ë¥ì ëª ë¬¸ì´ ìê²¨ì ¸ ì©ëì ì¬ì©ì², ì ìì를 ì ì ìë ë± ì´ê¸° ì²ìì ì ì ì í©ì ë³´ì¬ì£¼ë ì¤ìí í¸ë ìë£ì´ë¤. ì²ì íì리ë 과거ì ì¬ë¬ …
Organic Material Analysis of a Lacquered Wooden Sheath of Long Sword with Ring Pommel Excavated in Imdang Ancient Tomb Open
경북 경산에 위치한 원삼국시대 고분인 임당1호분에서 출토된 칠초 철제 고리자루칼의 칠편에 대해 칠의 구성성분 과 풍화상태를 확인하기 위해 열분해/GC/MS법으로 유기물을 분석하였다. 직접 열분해/GC/MS법에서 칠편과 원주산 건조옻이 대체적으로 유사한 크로마토그램을 보였다. THM(thermally assisted hydrolysis and methylation)-열분해 /GC/MS법의 경우 칠편에서 한국에 자생하는 옻나무 …
Initial-dip Based Quadcopter Control: Application to fNIRS-BCI Open
In this paper, the initial dips detected from the prefrontal cortex are used for the control of a quadcopter. Functional near-infrared spectroscopy (fNIRS) is used to detect the initial dips in the hemodynamic signals corresponding to ment…
Analysis of Binding Media Used in Mural Painting of Temple Wall by Pyrolysis/GC/MS and IR Open
ì ë¨ ì§ëêµ° ìì¬ ì¬ì°°ì ë³´ì ê³µì¬ ì¤ ë²½íê° ë°ê²¬ëì´ ì ìê¸°ë² íì ì ìí´ êµì°©ì ë¡ ì¬ì©ë 물ì§ì íì¸íê³ ì íìë¤. ì´ì í´ë¹ ë²½í ìí¸ì ëí´ ì´ë¶í´/GC/MSì IR ë¶ìì ì¤ì…