Jörg Schörmann
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View article: AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy
AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy Open
Nitride-based semiconductors are vital for efficient optoelectronic devices in the ultraviolet to green spectral range. However, producing red-emitting InGaN micro-LEDs is challenging due to lattice mismatch with traditional GaN substrates…
View article: Bandgaps in cubic InGaN for the entire composition range including many-body effects
Bandgaps in cubic InGaN for the entire composition range including many-body effects Open
We present our investigation of cubic zinc blende InGaN thin films grown by plasma-assisted molecular beam epitaxy on c-GaN/c-AlN/3C-SiC/Si substrates oriented in the (001) orientation. Through spectroscopic ellipsometry analyses spanning …
View article: Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy
Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy Open
Alternating metal-modulated molecular beam epitaxy enables the growth of both self-assembled c-InGaN/GaN quantum wells and fully alloyed c-InGaN layers. In situ reflection high-energy electron diffraction (RHEED) analysis coupled with ex s…
View article: Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy Open
Cubic InGaN alloys are a promising candidate material for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV toward the mid-infrared. T…
View article: Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD
Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD Open
Two‐dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials’ properties toward device applications. Monolayer to multilayer gallium s…
View article: Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors
Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors Open
In this work, the fabrication and characterization of a fully functional field‐effect transistor (FET) are addressed based on a non‐intentionally doped GaN‐nanowire FET (NW–FET). Universal conductance fluctuations (UCFs) are observed at te…
View article: Correlation between Surface Reactions and Electrochemical Performance of Al<sub>2</sub>O<sub>3</sub>‐ and CeO<sub>2</sub>‐Coated NCM Thin Film Cathodes
Correlation between Surface Reactions and Electrochemical Performance of Al<sub>2</sub>O<sub>3</sub>‐ and CeO<sub>2</sub>‐Coated NCM Thin Film Cathodes Open
Depositing ultrathin oxide coatings has been proven a successful approach to stabilize the surface of LiNi x Co y Mn z O 2 active cathode material in lithium‐ion batteries (LIB). The beneficial effect of Al 2 O 3 coatings arises at least p…
View article: Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires
Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires Open
A pronounced polarization anisotropy and spectral red-shift of the emission wavelength of individual InGaN nanowires is attributed to the spontaneous formation of superlattices caused by inhomogeneous In-distribution in the wires.
View article: Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures
Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures Open
Light emitting diodes represent a key technology that can be found in many areas of everydays life. Therefore, the improvement of the efficiency of such structures offers a high economic and ecological potential. One approach is electrosta…
View article: Surface Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition
Surface Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition Open
Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material deposition only in specific areas. Typically, the selectivity…
View article: Surface\nDiffusion Control Enables Tailored-Aspect-Ratio\nNanostructures in Area-Selective Atomic Layer Deposition
Surface\nDiffusion Control Enables Tailored-Aspect-Ratio\nNanostructures in Area-Selective Atomic Layer Deposition Open
Area-selective atomic\nlayer deposition is a key technology for\nmodern microelectronics as it eliminates alignment errors inherent\nto conventional approaches by enabling material deposition only in\nspecific areas. Typically, the selecti…
View article: Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>
Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub> Open
The search for new wide-band-gap materials is intensifying to satisfy the need for more advanced and energy-efficient power electronic devices. Ga2O3 has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamen…
View article: Atomic Layer Deposition of Titania in Ordered Mesoporous Cerium Zirconium Oxide Thin Films: A Case Study
Atomic Layer Deposition of Titania in Ordered Mesoporous Cerium Zirconium Oxide Thin Films: A Case Study Open
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View article: Suppression of the quantum-confined Stark effect in polar nitride heterostructures
Suppression of the quantum-confined Stark effect in polar nitride heterostructures Open
Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design “IFGARD”) for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppr…
View article: Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template
Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template Open
One-dimensional GaN quantum-wires grown on nanowire templates exhibit bright and sharp luminescence due to carrier transfer from the nanowire cores.
View article: Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires
Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires Open
An experimental strategy to assess the influence of ultra-thin oxide coatings on the performance of InGaN nanowire photoanodes is demonstrated.
View article: Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design Open
Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconducto…
View article: Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors Open
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias lea…
View article: <scp>3D</scp> Investigation of <scp>InGaN</scp> Nanodisks in <scp>GaN</scp> Nanowires
<span>3D</span> Investigation of <span>InGaN</span> Nanodisks in <span>GaN</span> Nanowires Open
Nanoscaled structures like nanowires (NWs) can influence device characteristics (e.g. higher internal efficiency [1]), making them very suitable for the application in optoelectronic devices. Complex structures like InGaN nanodisks (NDs) e…
View article: Ge doping of GaN beyond the Mott transition
Ge doping of GaN beyond the Mott transition Open
We present a study of germanium as n-type dopant in wurtzite GaN films grown\nby plasma-assisted molecular beam epitaxy, reaching carrier concentrations of\nup to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration\nand…
View article: UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices Open
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional G…
View article: Ge doping of GaN beyond the Mott transition using Plasma-Assisted Molecular-Beam Epitaxy
Ge doping of GaN beyond the Mott transition using Plasma-Assisted Molecular-Beam Epitaxy Open
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and fr…
View article: Nonpolar<i>m</i>-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band
Nonpolar<i>m</i>-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band Open
Graphene monolayers can be used for atomically thin three-dimensional shell-shaped superscatterer designs. Due to the excitation of the first-order resonance of transverse magnetic (TM) graphene plasmons, the scattering cross section of th…
View article: Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band Open
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two con…
View article: Long-lived excitons in GaN/AlN nanowire heterostructures
Long-lived excitons in GaN/AlN nanowire heterostructures Open
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay\ntimes on the order of microseconds that persist up to room temperature. Doping\nthe GaN nanodisk insertions with Ge can reduce these PL decay times by two\norders …