Jörg Schulze
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View article: Investigation of Poly-Si Gated, Al<sub>2</sub>O<sub>3</sub>-Based High-<i>k</i> Dielectrics on 4H-SiC
Investigation of Poly-Si Gated, Al<sub>2</sub>O<sub>3</sub>-Based High-<i>k</i> Dielectrics on 4H-SiC Open
In this paper, we investigate the electrical and structural characteristics of Al 2 O 3 -based high- k gate dielectrics, which were integrated into a gate-first, high-temperature manufacturing process having comparable thermal budget as ne…
View article: Production of IASI FDR and CDRs at EUMETSAT
Production of IASI FDR and CDRs at EUMETSAT Open
The Infrared Atmospheric Sounding Interferometer (IASI), onboard the three Metop satellites, has been delivering critical observations for atmospheric monitoring and numerical weather prediction for almost 18 years. To further enhance the …
View article: Parametrization of emitter photoluminescence towards AI-based color center quantification
Parametrization of emitter photoluminescence towards AI-based color center quantification Open
Quantum technology devices based on single photon emitters close to the surface or within photonic structures are affected by parasitic interface photoluminescence (PL) and interaction of the interfaces with the functional single photon em…
View article: Determination of the Scattering Length (Γ → L) by the Electrically Pumped Germanium Zener Emitter
Determination of the Scattering Length (Γ → L) by the Electrically Pumped Germanium Zener Emitter Open
View article: Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors Open
Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based la…
View article: Lateral Mn<sub>5</sub>Ge<sub>3</sub> spin-valve in contact with a high-mobility Ge two-dimensional hole gas
Lateral Mn<sub>5</sub>Ge<sub>3</sub> spin-valve in contact with a high-mobility Ge two-dimensional hole gas Open
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of …
View article: Ge-on-Si single-photon avalanche diode using a double mesa structure
Ge-on-Si single-photon avalanche diode using a double mesa structure Open
We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using this structure, the electric field at the mesa edges is suppressed compared to a traditional single…
View article: Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas Open
Ge two-dimensional hole gases in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficie…
View article: Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection
Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection Open
Avalanche photodiodes utilizing GeSn as an absorbing material can be used for low-light detection of telecommunication wavelengths, such as 1550 nm. We present the performance of GeSn-on-Si avalanche photodiodes at low-temperatures down to…
View article: Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications
Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications Open
The temperature-dependent electroluminescent properties of Ge-Diodes, especially the Ge-Zener-Emitter, with tunnel transitions are investigated. The direct band-gap behavior of Germanium below a temperature of 140 K is demonstrated, facili…
View article: Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopy
Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopy Open
Direct-band-gap Germanium-Tin alloys (Ge 1- x Sn x ) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the fin…
View article: Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge<sub>1-x</sub>Sn<sub>x</sub>
Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge<sub>1-x</sub>Sn<sub>x</sub> Open
Plasmonic structures made out of highly doped group-IV semiconductor materials are of large interest for the realization of fully integrated mid-infrared (MIR) devices. Utilizing highly doped Ge 1-x Sn x alloys grown on Si substrates is on…
View article: High mobility Ge 2DHG based MODFETs for low-temperature applications
High mobility Ge 2DHG based MODFETs for low-temperature applications Open
Modulation-doped field-effect transistors (MODFET) that are typically based on either a two-dimensional electron gas or a two-dimensional hole gas (2DHG) are highly suitable for low-temperature applications due to the high mobilities attai…
View article: Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting Open
The pseudomorphic growth of Ge 1− x Sn x on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge 1− x Sn x alloys. Therefore, efficient strain engineering is required. In this article, we present strain a…
View article: Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source
Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source Open
Plasmonic nanohole arrays that are directly structured into the top metallization of vertical Ge-on-Si PIN photodiodes can be used to sense refractive index changes. This concept can pave the way to fully integrated biosensors with small f…
View article: Modeling and design of an electrically pumped SiGeSn microring laser
Modeling and design of an electrically pumped SiGeSn microring laser Open
We present a suspended SiGeSn microring laser design that enables strain relaxation of the material layer stack, electrical pumping and adequate heat sinking. Using both strain and composition as two degrees of freedom to engineer the band…
View article: Plasmonic gratings from highly doped Ge<sub>1−y </sub>Sn <sub>y</sub> films on Si
Plasmonic gratings from highly doped Ge<sub>1−y </sub>Sn <sub>y</sub> films on Si Open
Plasmonic modes in metal structures are of great interest for optical applications. While metals such as Au and Ag are highly suitable for such applications at visible wavelengths, their high Drude losses limit their usefulness at mid-infr…
View article: Foreword Special Issue on Low-Temperature Processing of Electronic Materials for Cutting Edge Devices
Foreword Special Issue on Low-Temperature Processing of Electronic Materials for Cutting Edge Devices Open
Thermal budgets hinder leading-edge ultra-scaled and novel designs, and moving to reduced temperature processing is becoming an acute impediment globally.
View article: Inverse spin-Hall effect in GeSn
Inverse spin-Hall effect in GeSn Open
Due to the long spin lifetime and its optical and electrical properties, GeSn is a promising candidate for the integration of spintronics, photonics, and electronics. Here, we investigate the photoinduced inverse spin-Hall effect in a GeSn…
View article: Raman shifts in MBE‐grown Si<sub><i>x</i></sub>Ge<sub>1 − <i>x</i> − <i>y</i></sub>Sn<sub><i>y</i></sub> alloys with large Si content
Raman shifts in MBE‐grown Si<sub><i>x</i></sub>Ge<sub>1 − <i>x</i> − <i>y</i></sub>Sn<sub><i>y</i></sub> alloys with large Si content Open
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and Ge–Ge, are measure…
View article: Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes Open
View article: Quantifying thermal transport in buried semiconductor nanostructures <i>via</i> cross-sectional scanning thermal microscopy
Quantifying thermal transport in buried semiconductor nanostructures <i>via</i> cross-sectional scanning thermal microscopy Open
A unique sample polishing technique and scanning thermal microscopy were combined to quantify with few nm resolution the thermal conductance and local thermal conductivity of complex multilayer nanostructures.
View article: Optimization and Fabrication of Heterojunction Silicon Solar Cells Using an Experimental-Industrial Facility AK-1000 Inline
Optimization and Fabrication of Heterojunction Silicon Solar Cells Using an Experimental-Industrial Facility AK-1000 Inline Open
Introduction. Heterojunction silicon solar cells represent one of the most promising directions for the development of solar photovoltaics. This is due to both their high power conversion efficiency and reasonable likelihood for further gr…
View article: Photonic-Plasmonic Mode Coupling in Nanopillar Ge-On-Si Pin Photodiodes
Photonic-Plasmonic Mode Coupling in Nanopillar Ge-On-Si Pin Photodiodes Open
Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS…
View article: Hybrid Spintronic Materials from Conducting Polymers with Molecular Quantum Bits
Hybrid Spintronic Materials from Conducting Polymers with Molecular Quantum Bits Open
Hybrid materials consisting of organic semiconductors and molecular quantum bits promise to provide a novel platform for quantum spintronic applications. However, investigations of such materials, elucidating both the electrical and quantu…
View article: Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy
Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy Open
The binary alloy germanium tin has already been presented as a direct group IV semiconductor at high tin concentrations and specific strain. Therefore, it offers a promising approach for the monolithic integrated light source towards the o…
View article: Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas Open
We report on photodetection in deep subwavelength Ge(Sn) nano-islands on Si nano-pillar substrates, in which self-aligned nano-antennas in the Al contact metal are used to enhance light absorption by means of local surface plasmon resonanc…
View article: Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells Open
While GeSn alloys with high Sn content constitute direct group-IV semiconductors, their growth on Si remains challenging. The deposition of a few monolayers of pure Sn on Ge and their overgrowth with Ge using molecular beam epitaxy can be …
View article: Integrated Collinear Refractive Index Sensor with Ge PIN Photodiodes
Integrated Collinear Refractive Index Sensor with Ge PIN Photodiodes Open
Refractive index sensing is a highly sensitive and label-free detection\nmethod for molecular binding events. Commercial implementations of biosensing\nconcepts based on plasmon resonances typically require significant external\ninstrument…
View article: Structural and vibrational properties of SnxGe1-x: Modeling and experiments
Structural and vibrational properties of SnxGe1-x: Modeling and experiments Open
The effects of the composition and macroscopic strain on the structural properties and lattice vibrations of SnxGe1-x solid solutions (SSs) are investigated numerically, employing Tersoff empirical inter-atomic potentials, and experimental…