Arthur Fischer
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View article: Development of low nickel austenitic stainless steel for high temperature gasoline turbochargers
Development of low nickel austenitic stainless steel for high temperature gasoline turbochargers Open
Conventional austenitic stainless steel (ASS) with nickel (Ni) content in the range of 20 to 40 Wt% are primarily used for the Turbine Housing component of turbochargers for gasoline applications. Due to the increase in cost of the nickel …
View article: Vertical III-nitride thin-film power diode
Vertical III-nitride thin-film power diode Open
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by las…
View article: Flip-chip light emitting diode with resonant optical microcavity
Flip-chip light emitting diode with resonant optical microcavity Open
A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from t…
View article: Volume-scalable high-brightness three-dimensional visible light source
Volume-scalable high-brightness three-dimensional visible light source Open
A volume-scalable, high-brightness, electrically driven visible light source comprises a three-dimensional photonic crystal (3DPC) comprising one or more direct bandgap semiconductors. The improved light emission performance of the inventi…
View article: Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures Open
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched …
View article: Semiconductor laser with multiple lasing wavelengths
Semiconductor laser with multiple lasing wavelengths Open
A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made t…
View article: III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures
III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures Open
We demonstrate a top-down fabrication strategy for creating a III-nitride hole array photonic crystal (PhC) with embedded quantum wells (QWs). Our photoelectrochemical (PEC) etching technique is highly bandgap selective, permitting the rem…
View article: Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration
Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration Open
We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP…
View article: Visible Quantum Nanophotonics.
Visible Quantum Nanophotonics. Open
The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and ph…
View article: Deterministically placed quantum dots for quantum nanophotonics
Deterministically placed quantum dots for quantum nanophotonics Open
The ability to achieve deterministic placement of semiconductor quantum dots (QDs) opens up interesting possibilities for nanophotonic devices. By incorporating these QDs within microcavities, light-matter interaction can be tailored and e…
View article: III‐nitride quantum dots for ultra‐efficient solid‐state lighting
III‐nitride quantum dots for ultra‐efficient solid‐state lighting Open
III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequenc…