Joshua M. Duran
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View article: Degradation of minority carrier lifetime and performance of mid-wave infrared GaInAsSbBi <i>n</i>B<i>n</i> photodetectors as a function of 63 MeV proton irradiation
Degradation of minority carrier lifetime and performance of mid-wave infrared GaInAsSbBi <i>n</i>B<i>n</i> photodetectors as a function of 63 MeV proton irradiation Open
Alloys of GaInAsSbBi are grown by molecular beam epitaxy with various Bi compositions and subjected to a collimated beam of 63 MeV protons. Photoluminescence structures are used to evaluate the material’s minority carrier lifetime damage f…
View article: Sensitivity assessment of 4.8 <i>μ</i>m cutoff GaInAsSbBi <i>nBn</i> photodetectors for mid-wave infrared sensing applications
Sensitivity assessment of 4.8 <i>μ</i>m cutoff GaInAsSbBi <i>nBn</i> photodetectors for mid-wave infrared sensing applications Open
GaInAsSbBi nBn photodetectors are grown lattice-matched on GaSb by molecular beam epitaxy. Device structures exhibit smooth surface morphologies, minority carrier lifetimes on the order of 0.5 μs at 130 K, and demonstrate a 4.8 μm waveleng…
View article: Photodetector Focal Plane Arrays Integrated with Silicon Micropyramidal Structures in MWIR
Photodetector Focal Plane Arrays Integrated with Silicon Micropyramidal Structures in MWIR Open
Light-concentrating truncated Si micropyramidal arrays with 54.7 degree sidewall angles were successfully integrated with PtSi Schottky barrier photodetectors. Four different devices consisting of 10 x 10 photodetectors with 60 um pitch co…
View article: Focusing and Diffraction of Light by Periodic Si Micropyramidal Arrays
Focusing and Diffraction of Light by Periodic Si Micropyramidal Arrays Open
This research was devoted to modeling of the optical properties of Si micropyramids aimed at designing optimal structures for applications as light concentrators in mid-wave infrared (MWIR) focal place arrays (FPAs). It is shown that compl…
View article: InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation
InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation Open
This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was gro…
View article: Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness
Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness Open
In this paper we show that the internal quantum efficiency of NiSi Schottky-barrier photodetectors can be significantly improved as the silicide film thickness is reduced close to its percolation threshold. We fabricated photodetectors in …
View article: Silicon-Based Infrared Photodetectors for Low-Cost Imaging Applications
Silicon-Based Infrared Photodetectors for Low-Cost Imaging Applications Open
View article: Fabrication of ultrahigh aspect ratio silicon nanostructures using self-assembled gold metal-assisted chemical etching
Fabrication of ultrahigh aspect ratio silicon nanostructures using self-assembled gold metal-assisted chemical etching Open
We report the critical factors that control the geometry of silicon nanostructures produced by metal-assisted chemical etching (MacEtch) using self-assembled islands from an ultrathin film of gold. We have conducted a systematic study of t…
View article: Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE
Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE Open
Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation. As a re…