Jonathan J. Wierer
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View article: Process temperature dependence of sputtered MgO/<i>n</i>-type GaN metal–oxide–semiconductor capacitors
Process temperature dependence of sputtered MgO/<i>n</i>-type GaN metal–oxide–semiconductor capacitors Open
The temperature dependence of epitaxial growth of MgO on n-type (0001)-oriented GaN by radio frequency magnetron sputtering is investigated. Epitaxial growth is obtained for growth temperatures of 550 °C and above, but polycrystalline film…
View article: Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
Thermal oxidation of lattice mismatched Al1-xInxN films on GaN Open
Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 9…
View article: Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots Open
Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoele…
View article: Diode and method of making the same
Diode and method of making the same Open
A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor …
View article: Vertical III-nitride thin-film power diode
Vertical III-nitride thin-film power diode Open
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by las…
View article: Selective layer disordering in III-nitrides with a capping layer
Selective layer disordering in III-nitrides with a capping layer Open
Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfa…
View article: Impurity-induced disorder in III-nitride materials and devices
Impurity-induced disorder in III-nitride materials and devices Open
A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructur…
View article: High extraction efficiency ultraviolet light-emitting diode
High extraction efficiency ultraviolet light-emitting diode Open
Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to …
View article: Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers Open
Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN …
View article: Visible Quantum Nanophotonics.
Visible Quantum Nanophotonics. Open
The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and ph…
View article: Effect of interface roughness on Auger recombination in semiconductor quantum wells
Effect of interface roughness on Auger recombination in semiconductor quantum wells Open
Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carr…
View article: Al <sub>0</sub> <sub>.3</sub> Ga <sub>0.7</sub> N PN diode with breakdown voltage >1600 V
Al <sub>0</sub> <sub>.3</sub> Ga <sub>0.7</sub> N PN diode with breakdown voltage >1600 V Open
Demonstration of Al 0.3 Ga 0.7 N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal‐organic vapour‐phase epitaxy on 1.3‐mm‐thick sapphire in order to achie…
View article: Next Generation Photovoltaic Technologies For High-Performance Remote Power Generation (Final Report)
Next Generation Photovoltaic Technologies For High-Performance Remote Power Generation (Final Report) Open
A unique, micro-scale architecture is proposed to create a novel hybrid concentrated photovoltaic system. Micro-scale (sub-millimeter wide), multi-junction cells are attached to a large-area silicon cell backplane (several inches wide) tha…
View article: III‐nitride quantum dots for ultra‐efficient solid‐state lighting
III‐nitride quantum dots for ultra‐efficient solid‐state lighting Open
III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequenc…
View article: High voltage and high current density vertical GaN power diodes
High voltage and high current density vertical GaN power diodes Open
The realisation of a GaN high voltage vertical p – n diode operating at >3.9 kV breakdown with a specific on‐resistance <0.9 mΩ cm 2 is reported. Diodes achieved a forward current of 1 A for on‐wafer, DC measurements, corresponding to a cu…