J. Lorenz
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View article: ABoT 2.247, KBo. 57.180 und das Lied der Freilassung
ABoT 2.247, KBo. 57.180 und das Lied der Freilassung Open
This article discusses two fragments written down during Hittite Empire times that have been attributed to the Hurrian-Hittite bilingual Song of Release (CTH 789) found at the Hittite capital Ḫattuša. The authors argue that ABoT 2.247 is a…
View article: “Cadê meu anzol?”
“Cadê meu anzol?” Open
In the third section of Torto arado by Itamar Vieira Junior, an encantada, an Afro-Brazilian spirit being, takes over as narrator; her name is Santa Rita Pescadeira. Torto arado depicts the struggle of twentieth-century tenant farmers, and…
View article: Characterizing Neck Shrivel in European Plum
Characterizing Neck Shrivel in European Plum Open
Neck shrivel is a physiological disorder of european plum ( Prunus × domestica L.) fruit, characterized by a shriveled pedicel end and a turgescent stylar end. Affected fruit are perceived as of poor quality. Little is known of the mechani…
View article: Process Variability—Technological Challenge and Design Issue for Nanoscale Devices
Process Variability—Technological Challenge and Design Issue for Nanoscale Devices Open
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, employ truly three-dimensional architectures. Already for aggressively scaled bulk transistors, both statistical and systematic process vari…
View article: The Effect of Etching and Deposition Processes on the Width of Spacers Created during Self-Aligned Double Patterning
The Effect of Etching and Deposition Processes on the Width of Spacers Created during Self-Aligned Double Patterning Open
Topography process simulation has been used to study the interaction of etching and deposition processes for spacer creation for self-aligned double patterning (SADP). For the deposition process, the influence of the layer conformality was…
View article: (Invited) Process Variability for Devices at and Beyond the 7 nm Node
(Invited) Process Variability for Devices at and Beyond the 7 nm Node Open
Advanced CMOS devices are increasingly affected by various kinds of process variations. Whereas the impact of statistical process variations such as Random Dopant Fluctuations has for several years been discussed in numerous publications, …
View article: Process Variability for Devices at and beyond the 7 nm Node
Process Variability for Devices at and beyond the 7 nm Node Open
Advanced CMOS devices are increasingly affected by various kinds of process variations. Whereas the impact of statistical process variations such as Random Dopant Fluctuations has for several years been discussed in numerous publications, …
View article: Simulation of silicon-dot-based single-electron memory devices
Simulation of silicon-dot-based single-electron memory devices Open
Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding …