Julien Jussot
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View article: Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits
Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits Open
Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc$_2$) exemplifies such systems, with demonstrated quantum contr…
View article: Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity
Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity Open
View article: Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements Open
Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the identification of the desired charge states are long to acquire.…
View article: Precision high-speed quantum logic with holes on a natural silicon foundry platform
Precision high-speed quantum logic with holes on a natural silicon foundry platform Open
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst re…
View article: Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot Open
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spi…
View article: A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations Open
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits o…
View article: Radio-frequency cascade readout of coupled spin qubits fabricated using a 300~mm wafer process
Radio-frequency cascade readout of coupled spin qubits fabricated using a 300~mm wafer process Open
Advanced semiconductor manufacturing offers a promising path to scaling up silicon-based quantum processors by improving yield, uniformity, and integration. Individual spin qubit control and readout have been demonstrated in quantum dots f…
View article: Elongated quantum dot as a distributed charge sensor
Elongated quantum dot as a distributed charge sensor Open
Increasing the separation between semiconductor quantum dots offers scaling advantages by facilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs he…
View article: Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification
Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification Open
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric loss at different interfaces. α -tantalum is a superconductor that has proven effective in reducing dielectric loss and improv…
View article: High-efficiency dual single layer graphene modulator integrated on slot waveguides
High-efficiency dual single layer graphene modulator integrated on slot waveguides Open
This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impre…
View article: An elongated quantum dot as a distributed charge sensor
An elongated quantum dot as a distributed charge sensor Open
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs …
View article: Low charge noise quantum dots with industrial CMOS manufacturing
Low charge noise quantum dots with industrial CMOS manufacturing Open
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale …
View article: Low charge noise quantum dots with industrial CMOS manufacturing
Low charge noise quantum dots with industrial CMOS manufacturing Open
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale …
View article: Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers Open
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric l…
View article: Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms Open
View article: High mobility SiMOSFETs fabricated in a full 300 mm CMOS process
High mobility SiMOSFETs fabricated in a full 300 mm CMOS process Open
The quality of the semiconductor–barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si subs…
View article: High mobility SiMOSFETs fabricated in a full 300mm CMOS process
High mobility SiMOSFETs fabricated in a full 300mm CMOS process Open
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si subs…
View article: Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Impact of device scaling on the electrical properties of MoS2 field-effect transistors Open
View article: A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration Open
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic …
View article: Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect Transistors
Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect Transistors Open
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Her…
View article: Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate
Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate Open
View article: Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices Open
Magnetic tunnel junctions (MTJs) interconnected via a continuous\nferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG)\nlogic. The MTJs are biased independently and show magnetoelectric response\nunder spin transfe…
View article: Lithographie directe à faisceaux d’électrons multiples pour les nœuds technologiques sub-20nm
Lithographie directe à faisceaux d’électrons multiples pour les nœuds technologiques sub-20nm Open
For decades, the growth of the Semiconductor Industry (SI) has been driven by the paramount need for faster devices at a controlled cost primarily due to the shrinkage of chip transistors. The performances of future CMOS technology generat…
View article: Multibeam lithography for sub20nm technological nodes
Multibeam lithography for sub20nm technological nodes Open
Depuis de nombreuses années, l'industrie microélectronique s'est engagée dans une course à l'augmentation des performances et à la diminution des coûts de ses dispositifs grâce à la miniaturisation de ces derniers. La génération de ces str…