Junbo Park
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View article: Design and control of a permanent magnet spherical wheel motor
Design and control of a permanent magnet spherical wheel motor Open
We present a permanent magnet–based spherical wheel motor that can be used in omnidirectional mobility applications. The proposed motor consists of a ball‐shaped rotor with a magnetic dipole and a hemispherical shell with circumferential a…
View article: Efficiency improvement of a DC/DC converter using LTCC substrate
Efficiency improvement of a DC/DC converter using LTCC substrate Open
We propose a substrate with high thermal conductivity, manufactured by the low‐temperature co‐fired ceramic (LTCC) multilayer circuit process technology, as a new DC/DC converter platform for power electronics applications. We compare the …
View article: Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss
Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss Open
We propose a multilayered‐substrate‐based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost‐effective, low‐temperature co‐fired ceramic, multilayered substr…
View article: Pulse-Mode Dynamic<i>R</i><sub>on</sub>Measurement of Large-Scale High-Power AlGaN/GaN HFET
Pulse-Mode Dynamic<i>R</i><sub>on</sub>Measurement of Large-Scale High-Power AlGaN/GaN HFET Open
We propose pulse-mode dynamic Ron measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed…
View article: 0.34 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}}$ </tex-math> </inline-formula> AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
0.34 AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal Open
A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances.Using optimized dry etch condition for a large device, …