Junichi Kimura
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View article: Influence of the Li and M (M = V, Nb, Ta, or Zr) Composition Ratio on the Piezoelectric Properties of LiM-doped AlN Films
Influence of the Li and M (M = V, Nb, Ta, or Zr) Composition Ratio on the Piezoelectric Properties of LiM-doped AlN Films Open
This paper describes the piezoelectric properties of LiM-doped (M = V, Nb, Ta, or Zr) aluminum nitride ((LiyM1-y)xAl1-xN) films with respect to the composition ratio of Li and M. Films of (LiyM1-y)xAl1-xN were prepared by a radio frequency…
View article: Piezoelectric properties of LiM-doped (M = V, Nb, Ta, or Zr) AlN thin films
Piezoelectric properties of LiM-doped (M = V, Nb, Ta, or Zr) AlN thin films Open
Characterization of LiM-doped (M = V, Nb, Ta, or Zr) piezoelectric aluminum nitride ((Li y M 1− y ) x Al 1− x N) was performed by first-principles calculations and experimental approaches. The calculation results show that for all (Li y M …
View article: Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10− nanosheet seed layer
Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10− nanosheet seed layer Open
To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi 4 Ti 4 O 15 films with various film thicknesses were prepared on (100) c SrRuO 3 /Ca 2 Nb 3 O 10 − nanosheet/glass substrates. As the film thickness decreases to 50 nm…
View article: DURABILITY IMPROVEMENT OF PRECAST CONCRETE PRODUCTS
DURABILITY IMPROVEMENT OF PRECAST CONCRETE PRODUCTS Open
コンクリート製品の高耐久化、長寿命化として、高炉セメントB種にカルシウムサルフォアルミネート系膨張材、またはシリカ質微粉末系高強度材を併用し、常圧蒸気養生を行ったコンクリートの塩害、硫酸、中性化等に対する耐久性について検討を行った。また、併せて製品工場における実機試験を実施し、各種耐久性に優れるとともに、製品製造に支障のないフレッシュ性状かつJIS規格等にて規定される製品性能を有する製品製造が可能となることを確認した。
View article: Simultaneous achievement of high dielectric constant and low temperature dependence of capacitance in (111)-oriented BaTiO3-Bi(Mg0.5Ti0.5)O3-BiFeO3 solid solution thin films
Simultaneous achievement of high dielectric constant and low temperature dependence of capacitance in (111)-oriented BaTiO3-Bi(Mg0.5Ti0.5)O3-BiFeO3 solid solution thin films Open
The temperature dependence of the capacitance of (111)c-oriented (0.90–x)BaTiO3-0.10Bi(Mg0.5Ti0.5)O3-xBiFeO3 solid solution films is investigated. These films are prepared on (111)cSrRuO3/(111)Pt/TiO2/SiO2/(100)Si substrates by the chemica…
View article: Dielectric properties of BaTiO<sub>3</sub>&ndash;Bi(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub> films with preferential crystal orientation
Dielectric properties of BaTiO<sub>3</sub>–Bi(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub> films with preferential crystal orientation Open
Thin films of the BaTiO3–Bi(Mg1/2Ti1/2)O3 (BT–BMT) solid-solution system with preferential crystal orientation of (100) and (111) plane were fabricated on (100)SrRuO3//(100)SrTiO3 and (111)SrRuO3//(111)SrTiO3 substrates by CSD technique. E…
View article: Orientation and film thickness dependencies of (100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films grown by metal organic chemical vapor deposition
Orientation and film thickness dependencies of (100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films grown by metal organic chemical vapor deposition Open
(100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films with 500 and 1300 nm in thickness were grown by metal organic chemical vapor deposition. Remained strain was almost relaxed because the crystal structure of the films was almost th…