K. Takemasa
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View article: Extreme temperature operation for broad bandwidth quantum-dot based superluminescent diodes
Extreme temperature operation for broad bandwidth quantum-dot based superluminescent diodes Open
The high-temperature resilience of quantum-dot (QD) laser materials is exploited to realize a broad spectral bandwidth emitter in the near infrared. For an InAs/GaAs-based QD-superluminescent light emitting diode (SLEDs), we introduced a 2…
View article: Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design
Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design Open
We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grati…
View article: Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials
Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials Open
No abstract available.