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View article: Nonvolatile cryogenic phase-slip memory with single-shot readout
Nonvolatile cryogenic phase-slip memory with single-shot readout Open
The demand for cryogenic memory components is driven by the need for ultrafast, low-power, and highly reliable computing systems. Phase-slip-based devices promise to fulfill all these requirements, with potential applications in both class…
View article: Synchrotron Radiation for Quantum Technology
Synchrotron Radiation for Quantum Technology Open
In recent years, quantum technology has undergone transformative advancements, opening up unprecedented possibilities in computation, metrology, sensing, and communication and reshaping the landscape of scientific research. Based on superp…
View article: Nonvolatile Cryogenic Phase Slip Memory with Single-Shot Readout
Nonvolatile Cryogenic Phase Slip Memory with Single-Shot Readout Open
The demand for cryogenic memory components is driven by the need for ultra-fast, low-power, and highly reliable computing systems. Phase slip-based devices promise to fulfill all these requirements, with potential applications in both clas…
View article: Switching of a magnetic tunnel junction by voltage-controlled magnetic anisotropy
Switching of a magnetic tunnel junction by voltage-controlled magnetic anisotropy Open
sponsorship: This work was supported by KU Leuven Grants No. C14/18/074 and No. C14/24/110, by the FWO-FNRS WEAVE, and by the imec industrial affiliation program on magnetic memory. The authors declare no conflicts of interest. (KU Leuven|…
View article: Progress in Spin Logic Devices Based on Domain-Wall Motion
Progress in Spin Logic Devices Based on Domain-Wall Motion Open
Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memorie…
View article: Influence of the Interface on the Electric Control of the Magnetization Direction in Fe/PMN-PT Magnetoelectric Heterostructures
Influence of the Interface on the Electric Control of the Magnetization Direction in Fe/PMN-PT Magnetoelectric Heterostructures Open
The magnetization direction of a ferromagnetic (FM) film deposited onto a ferroelectric (FE) substrate undergoes significant changes when it is subjected to applied electric fields. These are mainly due to the strain-mediated magnetoelectr…
View article: Rendering the European Neutron Research Landscape
Rendering the European Neutron Research Landscape Open
Neutrons, owing to their unique properties, serve as indispensable probes for investigating the structure and dynamics of materials across various length scales. The scientific community utilizing neutron research infrastructures encompass…
View article: Magnetization-switching dynamics driven by chiral coupling
Magnetization-switching dynamics driven by chiral coupling Open
The Dzyaloshinskii-Moriya interaction (DMI) is known to play a central role in stabilizing chiral spin textures such as skyrmions and domain walls (DWs). Electrical manipulation of DW and skyrmion motion offers possibilities for next gener…
View article: Towards fully electrically controlled domain-wall logic
Towards fully electrically controlled domain-wall logic Open
Utilizing magnetic tunnel junctions (MTJs) for write/read and fast spin-orbit-torque (SOT)-driven domain-wall (DW) motion for propagation, enables non-volatile logic and majority operations, representing a breakthrough in the implementatio…
View article: Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst
Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst Open
By substituting the oxygen evolution reaction (OER) with the anodic urea oxidation reaction (UOR), it not only reduces energy consumption for green hydrogen generation but also allows purification of urea-rich wastewater. Spin engineering …
View article: Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx
Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx Open
In this work, the growth of a magnetron sputtered NiAl film on Ge was investigated. Two growth parameters were varied: the deposition temperature and the presence of native GeOx. An epitaxial layer was obtained at a deposition temperature …
View article: Atomistic Modeling of Spin and Electron Dynamics in Two-Dimensional Magnets Switched by Two-Dimensional Topological Insulators
Atomistic Modeling of Spin and Electron Dynamics in Two-Dimensional Magnets Switched by Two-Dimensional Topological Insulators Open
sponsorship: The project and work presented here were sponsored by the Department of Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the U.S. Federal Gover…
View article: Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators
Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators Open
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option f…
View article: Epitaxial growth of (100)-oriented SmN directly on (100)Si substrates
Epitaxial growth of (100)-oriented SmN directly on (100)Si substrates Open
sponsorship: This work was supported by the Research Foundation Flanders (FWO) , the KU Leuven BOF program (C14/18/074) and the New Zealand MBIE Endeavour fund (contract RTVU1810) . We would like to thank B. Auguie for RHEED image postproc…
View article: Ion beam modification of the Ni-Si solid-phase reaction: The influence of substrate damage and nitrogen impurities introduced by ion implantation
Ion beam modification of the Ni-Si solid-phase reaction: The influence of substrate damage and nitrogen impurities introduced by ion implantation Open
We report on the growth of thin NiSi films via the thermal reaction of Ni layers (13–35 nm) with Si(100) substrates modified by ion implantation. By introducing substrate damage or nitrogen impurities prior to the solid-phase reaction, sev…
View article: Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers—An Interface Effect
Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers—An Interface Effect Open
Combining various (multi-)ferroic materials into heterostructures is a promising route to enhance their inherent properties, such as the magnetoelectric coupling in BiFeO3 thin films. We have previously reported on the up-to-tenfold increa…
View article: Magnetoelectric Coupling in Epitaxial Multiferroic BiFeO<sub>3</sub>–BaTiO<sub>3</sub> Composite Thin Films
Magnetoelectric Coupling in Epitaxial Multiferroic BiFeO<sub>3</sub>–BaTiO<sub>3</sub> Composite Thin Films Open
Herein, the magnetoelectric (ME) performance of epitaxial multilayer composite films built from nanometer‐thick layers of multiferroic BiFeO 3 and ferroelectric BaTiO 3 is reviewed. A successful implementation of shadow‐mask pulsed laser d…
View article: Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As
Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As Open
In (Ga,Mn)As, a model dilute magnetic semiconductor, the electric and magnetic properties are strongly influenced by the lattice sites occupied by the Mn atoms. In particular, the highest Curie temperatures are achieved upon thermal anneali…
View article: Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects
Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects Open
Reducing the size of a superconductor below its characteristic length scales can either enhance or suppress its critical temperature (Tc). Depending on the bulk value of the electron-phonon coupling strength, electronic and phonon confinem…
View article: Impurity-enhanced solid-state amorphization: the Ni–Si thin film reaction altered by nitrogen
Impurity-enhanced solid-state amorphization: the Ni–Si thin film reaction altered by nitrogen Open
Solid-state amorphization, the growth of an amorphous phase during annealing, has been studied in a wide variety of thin film structures. Whereas research on the remarkable growth of such a metastable phase has mostly focused on strictly b…
View article: Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO<sub>3</sub>–BiFeO<sub>3</sub> multilayers
Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO<sub>3</sub>–BiFeO<sub>3</sub> multilayers Open
Using conversion electron Mössbauer spectroscopy, interesting correlations of hyperfine field, magnetization, polarization, and magnetoelectric coefficient could be established.
View article: Percolating transport in superconducting nanoparticle films
Percolating transport in superconducting nanoparticle films Open
Nanostructured and disordered superconductors exhibit many exotic fundamental phenomena, and also have many possible applications. We show here that films of superconducting lead nanoparticles with a wide range of particle coverages, exhib…
View article: Simple synthesis and characterization of vertically aligned Ba<sub>0.7</sub>Sr<sub>0.3</sub>TiO<sub>3</sub>–CoFe<sub>2</sub>O<sub>4</sub>multiferroic nanocomposites from CoFe<sub>2</sub>nanopillar arrays
Simple synthesis and characterization of vertically aligned Ba<sub>0.7</sub>Sr<sub>0.3</sub>TiO<sub>3</sub>–CoFe<sub>2</sub>O<sub>4</sub>multiferroic nanocomposites from CoFe<sub>2</sub>nanopillar arrays Open
A new strategy to elaborate (1-3) type multiferroic nanocomposites with controlled dimensions and vertical alignment is presented. The process involves a supported nanoporous alumina layer as a template for growth of free-standing and vert…
View article: Formation of ultrathin Ni germanides: solid-phase reaction, morphology and texture
Formation of ultrathin Ni germanides: solid-phase reaction, morphology and texture Open
The solid-phase reaction of ultrathin (<= 10 nm) Ni films with different Ge substrates (single-crystalline (100), polycrystalline, and amorphous) was studied. As thickness goes down, thin film texture becomes a dominant factor in both the …
View article: Lattice dynamics in Sn nanoislands and cluster-assembled films
Lattice dynamics in Sn nanoislands and cluster-assembled films Open
© 2017 American Physical Society. To unravel the effects of phonon confinement, the influence of size and morphology on the atomic vibrations is investigated in Sn nanoislands and cluster-assembled films. Nuclear resonant inelastic x-ray s…
View article: Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2
Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2 Open
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\CoFe(B) interfaces or usi…
View article: Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations
Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations Open
Radioactive ^{27}Mg (t_{1/2}=9.5 min) was implanted into GaN of different doping types at CERN's ISOLDE facility and its lattice site determined via β^{-} emission channeling. Following implantations between room temperature and 800 °C, th…