Explanipedia

Clinical diagnostic and prognostic value of homocysteine combined with hemoglobin [f (Hcy-Hb)] in cardio-renal syndrome caused by primary acute myocardial infarction Open

Minjuan Zeng, Yan-Quan Liu, Ping Pang, Xiaojun Chen, He Huang , et al. · 2025

Medicine

The newly constructed function [f (Hcy-Hb)], integrating Hcy and Hb levels, exhibits robust diagnostic and prognostic value in CRS. Furthermore, the f (Hcy-Hb)-nomogram model demonstrates superior predictive efficacy, net benefit, and cons…

Optical properties of Zr-doped AlN epilayers Open

H. Alwan, M. Almohammad, J. Li, J. Y. Lin, H. X. Jiang · 2025

Materials science Engineering

Aluminum nitride (AlN) doped with zirconium (Zr), AlN:Zr, an ultrawide bandgap semiconductor, has been theoretically predicted as a promising material for quantum information systems, piezoelectric applications, and photoconductive semicon…

NTIRE 2025 XGC Quality Assessment Challenge: Methods and Results Open

Xiaohong Liu, Xiongkuo Min, Hu Qiang, Xiaoyun Zhang, Jie Guo , et al. · 2025

This paper reports on the NTIRE 2025 XGC Quality Assessment Challenge, which will be held in conjunction with the New Trends in Image Restoration and Enhancement Workshop (NTIRE) at CVPR 2025. This challenge is to address a major challenge…

Development of 6-inch h-BN thick wafers Open

Z. Alemoush, M. Almohammad, J. Li, J. Y. Lin, H. X. Jiang · 2025

Materials science Engineering

We report the first successful synthesis of 40 μm thick h-BN wafers with a diameter of 6 in. using hydride vapor phase epitaxy. This accomplishment was made possible by employing BCl3 as the B precursor to eliminate carbon impurities, util…

Hexagonal Boron Nitride: Physical Properties, Hydride Vapor‐Phase Epitaxy Growth of Large‐Diameter Quasi‐Bulk Wafers and Applications Open

H. X. Jiang, J. Y. Lin · 2025

Materials science Chemistry Physics

Hexagonal boron nitride ( h ‐BN), with its ultrawide bandgap and 2D structure, holds an immense promise for advanced semiconductor applications. Scaling bulk crystals to large‐diameter wafers, crucial for complex device fabrication, remain…

Ultralow Voltage Operation of p‐ and n‐FETs Enabled by Self‐Formed Gate Dielectric and Metal Contacts on 2D Tellurium Open

Chang Niu, Linjia Long, Yizhi Zhang, Zehao Lin, Pukun Tan , et al. · 2025

Materials science Engineering Chemistry

The ongoing demand for more energy‐efficient, high‐performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device dimens…

Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping Open

Tariq Jamil, Abdullah Al Mamun Mazumder, M. Azizar Rahman, Muhammad Ali, J. Y. Lin , et al. · 2025

Materials science Chemistry

In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmissi…

Observation of Subnatural-Linewidth Biphotons In a Two-Level Atomic Ensemble Open

J. Y. Lin, T.-S. Chien, Chin-Te Wu, Ravikumar Chinnarasu, Shengwang Du , et al. · 2025

Physics Materials science

Biphotons and single photons with narrow bandwidths and long coherence times are essential to the realization of long-distance quantum communication (LDQC) and linear optical quantum computing (LOQC). In this Letter, we manipulate the biph…

Growth and characterization of high-quality Zr doped AlN epilayers Open

H. Alwan, Nazir Hossain, J. Li, J. Y. Lin, H. X. Jiang · 2025

Materials science

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) …

Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons Open

J. Li, A. Tingsuwatit, Z. Alemoush, J. Y. Lin, H. X. Jiang · 2025

Materials science Physics

III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. Among III-nitrides, BN has another unique application as a solid-state neutron dete…

Fundamental optical transitions in hexagonal boron nitride epilayers Open

J. Li, J. Y. Lin, H. X. Jiang · 2024

Materials science Chemistry Physics

Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission…

Cardiac secreted-HSP90alpha in cardiomyocyte hypertrophy by N-Cadherin mediated signaling under pressure overload Open

Liang Pan, Congxin Huang, Xiaolin Jin, J. Y. Lin, Yanfang Wang , et al. · 2024

Medicine Biology

Background Left ventricular hypertrophy (LVH) in response to pressure overload is strongly associated with adverse cardiovascular outcomes. Heat shock protein 90 (HSP90) has been reported to be involved in cardiac remodeling under stress. …

Probing room temperature indirect and minimum direct band gaps of h-BN Open

Nazir Hossain, A. Tingsuwatit, Z. Alemoush, M. Almohammad, Jing Li , et al. · 2024

Materials science Computer science Chemistry

Hexagonal boron nitride (h-BN) has attracted considerable interest as an ultrawide bandgap (UWBG) semiconductor. Experimental studies focused on the detailed near band-edge structure of h-BN at room temperature are still lacking. We report…

Status of h-BN quasi-bulk crystals and high efficiency neutron detectors Open

Z. Alemoush, A. Tingsuwatit, A. Maity, J. Li, J. Y. Lin , et al. · 2024

Materials science Physics

III-nitrides have fomented a revolution in the lighting industry and are poised to make a huge impact in the field of power electronics. In the III-nitride family, the crystal growth and use of hexagonal BN (h-BN) as an ultrawide bandgap (…

Learning Neural Volumetric Pose Features for Camera Localization Open

J. Y. Lin, Jiaqi Gu, Bojian Wu, Lubin Fan, Renjie Chen , et al. · 2024

Computer science

We introduce a novel neural volumetric pose feature, termed PoseMap, designed to enhance camera localization by encapsulating the information between images and the associated camera poses. Our framework leverages an Absolute Pose Regressi…

Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy Open

Z. Alemoush, A. Tingsuwatit, J. Li, J. Y. Lin, H. X. Jiang · 2023

Materials science Chemistry Physics

Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG) semiconductor (Eg~6 eV). The crystal growth technologies for producing semi-bulk crystals/epilayers in large wafer sizes and understanding of defect properties lag de…

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications Open

Rongqing Hui, H. X. Jiang, J. Y. Lin · 2023

Materials science Engineering

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconducto…

Solid-state neutron detector Open

H. X. Jiang, J. Y. Lin, Jing Li, A. Maity, Sam Grenadier · 2023

Physics Computer science

A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN s…

Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy Open

Z. Alemoush, Nazir Hossain, A. Tingsuwatit, M. Almohammad, J. Li , et al. · 2023

Materials science Physics

Presently, thermal neutron detectors fabricated from boron-10 enriched hexagonal boron nitride (h-10BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor deposition (MOCVD) hold the record high detection efficiency amon…

Boron Nitride Solid-State Neutron Detectors Open

J. Y. Lin, H. X. Jiang, Jing Li, A. Tingsuwatit, A. Maity , et al. · 2022

Materials science Chemistry Physics

The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h-10BN or 10BN or BN) semiconduct…

Numerical Simulation of Natural Gas Hydrate Development by Decompression Assisted CO2 Replacement Method Open

Wenlong Gao, Pinghua Ma, Xixi Wang, Senwei Han, J. Y. Lin , et al. · 2022

Chemistry Geology Physics

Based on the study of the properties of natural gas hydrate characteristics and displacement mechanism, the mathematical model of natural gas hydrate exploitation by decompression assisted CO2 replacement method has been established. Based…

Probing the bandgap and effects of t-BN domains in h-BN neutron detectors Open

A. Tingsuwatit, Jing Li, J. Y. Lin, H. X. Jiang · 2022

Materials science Physics Chemistry

Thermal neutron detectors in a lateral scheme were fabricated from a 70 μ m thick freestanding B-10 enriched hexagonal BN (h- 10 BN). Two sets of channel peaks corresponding to the neutron capture by 10 B occurring in h- 10 BN comprising t…

DPTNet: A Dual-Path Transformer Architecture for Scene Text Detection Open

J. Y. Lin, Jie Jiang, Yan Yan, Chunchao Guo, Hongfa Wang , et al. · 2022

Computer science Physics Art

The prosperity of deep learning contributes to the rapid progress in scene text detection. Among all the methods with convolutional networks, segmentation-based ones have drawn extensive attention due to their superiority in detecting text…

Boron nitride neutron detector with the ability for detecting both thermal and fast neutrons Open

A. Tingsuwatit, A. Maity, S. J. Grenadier, J. Li, J. Y. Lin , et al. · 2022

Materials science Physics

The detection of fast neutrons is regarded technically challenging because the interaction probability of fast neutron with matter is extremely low. Based on our recent development of hexagonal boron nitride (BN) semiconductor thermal neut…

Effects of unique band structure of h-BN probed by photocurrent excitation spectroscopy Open

S. J. Grenadier, A. Maity, Jing Li, J. Y. Lin, H. X. Jiang · 2022

Materials science Chemistry Physics

By employing a photocurrent excitation spectroscopy measurement, a direct bandgap of ∼6.46 eV has been resolved for the first time in thick B-10 enriched h -BN films. Together with previous band calculations, an unconventional energy diagr…

Endogenous Lipid-GPR120 Signaling Modulates Pancreatic Islet Homeostasis to Different Extents Open

Yaqin Du, Xue-Ying Sha, Jie Cheng, Jin Wang, J. Y. Lin , et al. · 2022

Chemistry Biology Medicine

Long-chain fatty acids (LCFAs) not only are energy sources but also serve as signaling molecules. GPR120, an LCFA receptor, plays key roles in maintaining metabolic homeostasis. However, whether endogenous ligand-GPR120 circuits exist and …

Endogenous Lipid-GPR120 Signaling Modulates Pancreatic Islet Homeostasis to Different Extents Open

Yaqin Du, Xue-Ying Sha, Jie Cheng, Jin Wang, J. Y. Lin , et al. · 2022

Biology Chemistry Medicine

Long-chain fatty acids (LCFAs) not only are energy sources but also serve as signaling molecules. GPR120, an LCFA receptor, plays key roles in maintaining metabolic homeostasis. However, whether endogenous ligand-GPR120 circuits exist and …

Effects of the polarization field on optical transitions and selection rules in Er doped GaN Open

Y. Q. Yan, Jing Li, J. Y. Lin, H. X. Jiang · 2022

Materials science Chemistry Physics

Effects of the polarization field on the Er 3+ intra-4f shell transitions in GaN have been investigated via comparison of photoluminescence emission spectroscopy studies conducted on Er:GaN and Er:YAG. The dominant optical transitions were…

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